IPA80R1K4P7 Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: IPA80R1K4P7
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 24 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 800 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 4 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 8 ns
Cossⓘ - Выходная емкость: 6.5 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1.4 Ohm
Тип корпуса: TO220FP
- подбор MOSFET транзистора по параметрам
IPA80R1K4P7 Datasheet (PDF)
ipa80r1k4p7.pdf

IPA80R1K4P7MOSFETPG-TO 220 FP800V CoolMOS P7 Power DeviceThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features Best-in-class FOM R * E ; reduced Q , C , and CDS(o
ipa80r1k4ce.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE800V CoolMOS CE Power TransistorIPA80R1K4CEData SheetRev. 2.1FinalPower Management & Multimarket800V CoolMOS CE Power TransistorIPA80R1K4CETO-220 FP1 DescriptionCoolMOS CE is a revolutionary technology for high voltage powerMOSFETs. The high voltage capability combines safety with performan
ipa80r1k4ce.pdf

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA80R1K4CEFEATURESWith TO-220F packageLow input capacitance and gate chargeReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME
ipa80r1k2p7.pdf

IPA80R1K2P7MOSFETPG-TO 220 FP800V CoolMOS P7 Power DeviceThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features Best-in-class FOM R * E ; reduced Q , C , and CDS(o
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: FQP1N50 | NCEP065N10GU
History: FQP1N50 | NCEP065N10GU



Список транзисторов
Обновления
MOSFET: ZM019N03N | DH116N08I | DH116N08F | DH116N08E | DH116N08D | DH116N08B | DH116N08 | DH10H037R | DH10H035R | DH100P40 | DH100P35I | DH100P35F | DH100P35E | DH100P35D | DH100P35B | DH100P35
Popular searches
b772m transistor | mj15003g datasheet | irfp460n datasheet | mj15025g | ksa1381 replacement | m3056m mosfet | skd502t mosfet | tip 35 transistor