IPAN60R360PFD7S Datasheet. Specs and Replacement

Type Designator: IPAN60R360PFD7S

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 23 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 12 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm

Package: TO220FP

IPAN60R360PFD7S substitution

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IPAN60R360PFD7S datasheet

 0.1. Size:1153K  infineon
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IPAN60R360PFD7S

IPAN60R360PFD7S MOSFET PG-TO 220 FP 600V CoolMOS PFD7 SJ Power Device CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS PFD7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, mot... See More ⇒

 3.1. Size:1038K  infineon
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IPAN60R360PFD7S

IPAN60R360P7S MOSFET PG-TO 220 FP 600V CoolMOS P7 Power Transistor The CoolMOS 7th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ... See More ⇒

 7.1. Size:727K  1
ipan60r650ce.pdf pdf_icon

IPAN60R360PFD7S

IPAN60R650CE MOSFET PG-TO 220 FP 600V CoolMOS CE Power Transistor CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in Consumer and Lighting markets by still meeting... See More ⇒

 7.2. Size:727K  infineon
ipan60r650ce.pdf pdf_icon

IPAN60R360PFD7S

IPAN60R650CE MOSFET PG-TO 220 FP 600V CoolMOS CE Power Transistor CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in Consumer and Lighting markets by still meeting... See More ⇒

Detailed specifications: IPA95R1K2P7, IPA95R450P7, IPA95R750P7, IPAN60R125PFD7S, IPAN60R210PFD7S, IPAN60R280P7S, IPAN60R280PFD7S, IPAN60R360P7S, IRF3205, IPAN60R600P7S, IPAN70R360P7S, IPAN70R450P7S, IPAN70R600P7S, IPAN70R750P7S, IPAN70R900P7S, IPAN80R280P7, IPAN80R360P7

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