Справочник MOSFET. IPAN60R360PFD7S

 

IPAN60R360PFD7S Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: IPAN60R360PFD7S
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 23 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 10 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 11 ns
   Cossⓘ - Выходная емкость: 12 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.36 Ohm
   Тип корпуса: TO220FP
 

 Аналог (замена) для IPAN60R360PFD7S

   - подбор ⓘ MOSFET транзистора по параметрам

 

IPAN60R360PFD7S Datasheet (PDF)

 0.1. Size:1153K  infineon
 ipan60r360pfd7s.pdf pdf_icon

IPAN60R360PFD7S

IPAN60R360PFD7SMOSFETPG-TO 220 FP600V CoolMOS PFD7 SJ Power DeviceCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS PFD7 is an optimized platform tailored to targetcost sensitive applications in consumer markets such as charger, adapter,mot

 3.1. Size:1038K  infineon
 ipan60r360p7s.pdf pdf_icon

IPAN60R360PFD7S

IPAN60R360P7SMOSFETPG-TO 220 FP600V CoolMOS P7 Power TransistorThe CoolMOS 7th generation platform is a revolutionary technology forhigh voltage power MOSFETs, designed according to the superjunction(SJ) principle and pioneered by Infineon Technologies. The 600VCoolMOS P7 series is the successor to the CoolMOS P6 series. Itcombines the benefits of a fast switching SJ

 7.1. Size:727K  1
 ipan60r650ce.pdf pdf_icon

IPAN60R360PFD7S

IPAN60R650CEMOSFETPG-TO 220 FP600V CoolMOS CE Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. CoolMOS CE is aprice-performance optimized platform enabling to target cost sensitiveapplications in Consumer and Lighting markets by still meeting

 7.2. Size:727K  infineon
 ipan60r650ce.pdf pdf_icon

IPAN60R360PFD7S

IPAN60R650CEMOSFETPG-TO 220 FP600V CoolMOS CE Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. CoolMOS CE is aprice-performance optimized platform enabling to target cost sensitiveapplications in Consumer and Lighting markets by still meeting

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... IPA95R1K2P7 , IPA95R450P7 , IPA95R750P7 , IPAN60R125PFD7S , IPAN60R210PFD7S , IPAN60R280P7S , IPAN60R280PFD7S , IPAN60R360P7S , IRF3205 , IPAN60R600P7S , IPAN70R360P7S , IPAN70R450P7S , IPAN70R600P7S , IPAN70R750P7S , IPAN70R900P7S , IPAN80R280P7 , IPAN80R360P7 .

History: UFZ24NL-TA3 | 2SK2923 | CJU04N65

 

 
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