All MOSFET. IPB120N08S4-03 Datasheet

 

IPB120N08S4-03 MOSFET. Datasheet pdf. Equivalent

Type Designator: IPB120N08S4-03

Marking Code: 4N0803

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 278 W

Maximum Drain-Source Voltage |Vds|: 80 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 120 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 128 nC

Rise Time (tr): 15 nS

Drain-Source Capacitance (Cd): 3435 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0025 Ohm

Package: TO263

IPB120N08S4-03 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPB120N08S4-03 Datasheet (PDF)

0.1. ipb120n08s4-03 ipi120n08s4-03 ipp120n08s4-03.pdf Size:225K _infineon

IPB120N08S4-03
IPB120N08S4-03

IPB120N08S4-03IPI120N08S4-03, IPP120N08S4-03OptiMOS-T2 Power-TransistorProduct SummaryV 80 VDSR (SMD version) 2.5mWDS(on),maxI 120 ADFeatures N-channel - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested

1.1. ipb120n08s4-04 ipi120n08s4-04 ipp120n08s4-04.pdf Size:211K _infineon

IPB120N08S4-03
IPB120N08S4-03

IPB120N08S4-04IPI120N08S4-04, IPP120N08S4-04OptiMOS-T2 Power-TransistorProduct SummaryV 80 VDSR (SMD version) 4.1mWDS(on),maxI 120 ADFeatures N-channel - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested

 6.1. ipb120n03s4l-03.pdf Size:277K _infineon

IPB120N08S4-03
IPB120N08S4-03

IPB120N03S4L-03OptiMOS-T2 Power-TransistorProduct SummaryFeaturesV 30 VDS N-channel - Enhancement modeR 3mWDS(on),max Automotive AEC Q101 qualifiedI 120 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO263-3-2 Green package (lead free) 100% Avalanche testedType Package Ordering Code MarkingIPB120N03S4L-03 PG-TO263-3-2 -

6.2. ipb120n04s3-02 ipi120n04s3-02 ipp120n04s3-02 ipp120n04s3 ipb120n04s3 ipi120n04s3-02.pdf Size:191K _infineon

IPB120N08S4-03
IPB120N08S4-03

IPB120N04S3-02IPI120N04S3-02, IPP120N04S3-02OptiMOS-T Power-TransistorProduct SummaryV 40 VDSR (SMD version) 2.0mDS(on),maxI 120 ADFeatures N-channel - Enhancement mode Automotive AEC Q101 qualified PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) Ultra low Rd

 6.3. ipb120n06s4-h1 ipi120n06s4-h1 ipp120n06s4-h1.pdf Size:170K _infineon

IPB120N08S4-03
IPB120N08S4-03

IPB120N06S4-H1IPI120N06S4-H1, IPP120N06S4-H1OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR (SMD version) 2.1mDS(on),max I 120 ADFeatures N-channel - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche teste

6.4. ipb120n04s4l-02.pdf Size:203K _infineon

IPB120N08S4-03
IPB120N08S4-03

Data Sheet IPB120N04S4L-02OptiMOSTM-T2 Power-TransistorProduct SummaryVDS 40 VRDS(on),max 1.7mID 120 AFeaturesPG-TO263-3-2 N-channel Logic Level - Enhancement mode AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPB120N04S4L-02 PG-TO263-3- 4N04L02

 6.5. ipb120n04s4-04.pdf Size:263K _infineon

IPB120N08S4-03
IPB120N08S4-03

IPB120N04S4-04OptiMOS-T2 Power-TransistorProduct SummaryFeaturesV 40 VDS N-channel - Enhancement modeR 3.6mWDS(on),max Automotive AEC Q101 qualifiedI 120 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO263-3-2 Green package (lead free) 100% Avalanche testedType Package Ordering Code MarkingIPB120N04S4-04 PG-TO263-3-2 -

6.6. ipb120n06ng ipp120n06ng.pdf Size:737K _infineon

IPB120N08S4-03
IPB120N08S4-03

IPB120N06N G IPP120N06N G Power-TransistorProduct SummaryFeaturesV D O >@ 50AB AE8B278=6 2>=D4@B4@A 0=3 AG=2 @42B85820B8>=R 11 7 m + >= =O ' 270==4; 4=70=24@?4@0B8=6 B4"+ 2>64= 5@44 022>@38=6 B> # Type #)) ' ' ! #) ' ' !Package O 1 O

6.7. ipb120n06s4-03 ipi120n06s4-03 ipp120n06s4-03 ipp120n06s4 ipb120n06s4 ipi120n06s4-03.pdf Size:170K _infineon

IPB120N08S4-03
IPB120N08S4-03

IPB120N06S4-03IPI120N06S4-03, IPP120N06S4-03OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR (SMD version) 2.8mDS(on),max I 120 ADFeatures N-channel - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche teste

6.8. ipi120n04s4-02 ipp120n04s4-02 ipb120n04s4-02.pdf Size:164K _infineon

IPB120N08S4-03
IPB120N08S4-03

IPB120N04S4-02IPI120N04S4-02, IPP120N04S4-02OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR (SMD version) 1.8mDS(on),max I 120 ADFeaturesPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedTy

6.9. ipi120n06s4-h1 ipp120n06s4-h1 ipb120n06s4-h1.pdf Size:174K _infineon

IPB120N08S4-03
IPB120N08S4-03

IPB120N06S4-H1IPI120N06S4-H1, IPP120N06S4-H1OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR (SMD version) 2.1mDS(on),max I 120 ADFeatures N-channel - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche teste

6.10. ipb120n04s4-01 ipi120n04s4-01 ipp120n04s4-01 ipp120n04s4-01 ipb120n04s4-01 ipi120n04s4-01.pdf Size:159K _infineon

IPB120N08S4-03
IPB120N08S4-03

IPB120N04S4-01IPI120N04S4-01, IPP120N04S4-01OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR (SMD version) 1.5mDS(on),max I 120 ADFeaturesPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedTy

6.11. ipb120n06s4-02 ipi120n06s4-02 ipp120n06s4-02 ipp120n06s4 ipb120n06s4 ipi120n06s4-02.pdf Size:170K _infineon

IPB120N08S4-03
IPB120N08S4-03

IPB120N06S4-02IPI120N06S4-02, IPP120N06S4-02OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR (SMD version) 2.4mDS(on),max I 120 ADFeaturesPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedTy

6.12. ipb120n04s4-02 ipi120n04s4-02 ipp120n04s4-02.pdf Size:159K _infineon

IPB120N08S4-03
IPB120N08S4-03

IPB120N04S4-02IPI120N04S4-02, IPP120N04S4-02OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR (SMD version) 1.8mDS(on),max I 120 ADFeaturesPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedTy

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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