All MOSFET. IPB140N08S4-04 Datasheet


IPB140N08S4-04 MOSFET. Datasheet pdf. Equivalent

Type Designator: IPB140N08S4-04

Marking Code: 4N0804

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 161 W

Maximum Drain-Source Voltage |Vds|: 80 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 140 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 60 nC

Rise Time (tr): 10 nS

Drain-Source Capacitance (Cd): 1600 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0042 Ohm

Package: TO263-7

IPB140N08S4-04 Transistor Equivalent Substitute - MOSFET Cross-Reference Search


IPB140N08S4-04 Datasheet (PDF)

0.1. ipb140n08s4-04.pdf Size:199K _infineon


IPB140N08S4-04OptiMOS-T2 Power-TransistorProduct SummaryV 80 VDSR 4.2mWDS(on),maxI 140 ADFeatures N-channel - Enhancement modePG-TO263-7-3 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPB140N08S4-04 PG-TO263-7-3 4N0804Maximum ratin

9.1. ipp147n03l-g ipb147n03l-g.pdf Size:446K _infineon


Type IPP147N03L GIPB147N03L GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 30 VDS Fast switching MOSFET for SMPSR 14.7mDS(on),max Optimized technology for DC/DC convertersI 20 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(

9.2. ipb14n03la ipi14n03la ipp14n03la.pdf Size:348K _infineon


IPB14N03LAIPI14N03LA, IPP14N03LAOptiMOS2 Power-TransistorProduct SummaryFeaturesV 25 VDS Ideal for high-frequency dc/dc convertersR (SMD version) 13.6mDS(on),max N-channelI 30 AD Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)P-TO263-3-2 P-TO262-3-1 P-TO220-3-1 Superior thermal resistance

 9.3. ipb144n12n3g ipi147n12n3g ipp147n12n3g ipp147n12n3 ipi147n12n3 ipb144n12n3.pdf Size:771K _infineon


IPB144N12N3 GIPI147N12N3 G IPP147N12N3 G 3 Power-TransistorProduct SummaryFeaturesV 1 D R ( 492??6= ?@C>2= =6G6=R 14 7 m - @? >2I R I46==6?E 82E6 492C86 I R AC@5F4E !) ' D n)I DR /6CJ =@H @? C6D:DE2?46 RD n)R U @A6C2E:?8 E6>A6C2EFC6R *3 7C66 =625 A=2E:?8 , @#- 4@>A=:2?E1)R + F2=:7:65 244@C5:?8 E@ % 7@C E2C86E 2AA=:42E:@?R $562= 7@C 9:89 7C6BF6?4J DH

9.4. ipb144n12n3g.pdf Size:257K _inchange_semiconductor


Isc N-Channel MOSFET Transistor IPB144N12N3GFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .


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