STD17N06 MOSFET Datasheet: N-Ch, 60V, 17A. Full specification with pinout and replacement list

STD17N06 Specs and Replacement

Type Designator: STD17N06

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Pd ⓘ - Maximum Power Dissipation: 55 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 17 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

tr ⓘ - Rise Time: 120 nS

Cossⓘ - Output Capacitance: 250 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm

Package: DPAK

STD17N06 substitution

- MOSFET ⓘ Cross-Reference Search

STD17N05 STD17N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V R I DSS DS(on) D STD17N05 50 V ... See More ⇒

STD17N05L STD17N06L N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STD17N05L 50 V ... See More ⇒

0.2. Size:350K st
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STD17N05L STD17N06L N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STD17N05L 50 V ... See More ⇒

7.1. Size:180K st
std17n05.pdf pdf_icon

STD17N05 STD17N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V R I DSS DS(on) D STD17N05 50 V ... See More ⇒

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

History: FDMC2514SDC

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