BSC220N20NSFD Specs and Replacement
Type Designator: BSC220N20NSFD
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 26 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 210 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
Package: TSON-8-3
BSC220N20NSFD substitution
- MOSFET ⓘ Cross-Reference Search
BSC220N20NSFD datasheet
bsc220n20nsfd.pdf
BSC220N20NSFD MOSFET TSON-8-3 OptiMOSTM3 Power-Transistor, 200 V 8 7 5 6 6 Features 7 5 8 N-channel, normal level Pin 1 175 C rated 2 4 3 3 Excellent gate charge x R product (FOM) DS(on) 4 2 1 Very low on-resistance R DS(on) Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249-2-21 Ideal for high-frequency switching and ... See More ⇒
bsc22dn20ns3.pdf
Type BSC22DN20NS3 G OptiMOSTM3 Power-Transistor Product Summary Features VDS 200 V Optimized for dc-dc conversion RDS(on),max 225 m N-channel, normal level ID 7 A Excellent gate charge x R product (FOM) DS(on) Low on-resistance R DS(on) PG-TDSON-8 150 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for... See More ⇒
Detailed specifications: AUIRF8739L2TR, AUIRFSA8409-7P, BF999, BSC012N06NS, BSC025N08LS5, BSC027N10NS5, BSC037N08NS5T, BSC079N03LSCG, IRF530, BSG0810NDI, BSZ018NE2LSI, BSZ068N06NS, BSZ100N06NS, BSZ15DC02KDH, BSZ160N10NS3, BSZ215CH, DF11MR12W1M1PB11
Keywords - BSC220N20NSFD MOSFET specs
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