All MOSFET. BSC220N20NSFD Datasheet

 

BSC220N20NSFD Datasheet and Replacement


   Type Designator: BSC220N20NSFD
   Marking Code: 220N20F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 26 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 34 nC
   tr ⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 210 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
   Package: TSON-8-3
 

 BSC220N20NSFD substitution

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BSC220N20NSFD Datasheet (PDF)

 ..1. Size:811K  infineon
bsc220n20nsfd.pdf pdf_icon

BSC220N20NSFD

BSC220N20NSFDMOSFETTSON-8-3OptiMOSTM3 Power-Transistor, 200 V8756 6Features 758 N-channel, normal levelPin 1 175 C rated2433 Excellent gate charge x R product (FOM)DS(on)4 21 Very low on-resistance RDS(on) Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249-2-21 Ideal for high-frequency switching and

 9.1. Size:313K  infineon
bsc22dn20ns3.pdf pdf_icon

BSC220N20NSFD

TypeBSC22DN20NS3 GOptiMOSTM3 Power-TransistorProduct SummaryFeaturesVDS 200 V Optimized for dc-dc conversionRDS(on),max 225m N-channel, normal levelID 7 A Excellent gate charge x R product (FOM)DS(on) Low on-resistance RDS(on)PG-TDSON-8 150 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFP460 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

Keywords - BSC220N20NSFD MOSFET datasheet

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