All MOSFET. BSG0810NDI Datasheet

 

BSG0810NDI Datasheet and Replacement


   Type Designator: BSG0810NDI
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Id| ⓘ - Maximum Drain Current: 31 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 4.7 nS
   Cossⓘ - Output Capacitance: 390 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0009 Ohm
   Package: TISON8-4
 

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BSG0810NDI Datasheet (PDF)

 ..1. Size:377K  infineon
bsg0810ndi.pdf pdf_icon

BSG0810NDI

BSG0810NDIProduct Summary Power BlockQ1 Q2 FeaturesVDS 25 25 V Dual asymmetric N-channel OptiMOS5 MOSFETRDS(on),max VGS=10 V 3 0.85 mW Logic level (4.5V rated)VGS=4.5 V 4 1.2 Pb-free lead plating; RoHS compliantID 50 50 A Optimized for high performance Buck converter S1/D2 (VPhase) (5) (4)D1 (Vin) Qualified according to JEDEC1) for target ap

 8.1. Size:370K  infineon
bsg0813ndi.pdf pdf_icon

BSG0810NDI

BSG0813NDIProduct Summary Power BlockQ1 Q2 FeaturesVDS 25 25 V Dual asymmetric N-channel OptiMOS5 MOSFETRDS(on),max VGS=10 V 3 1.2 mW Logic level (4.5V rated)VGS=4.5 V 4 1.7 Optimized for high performance buck convertersID 50 50 A Pb-free lead plating; RoHS compliantS1/D2 (VPhase) (5) (4)D1 (Vin) Qualified according to JEDEC1) for target app

 8.2. Size:525K  infineon
bsg0811nd.pdf pdf_icon

BSG0810NDI

BSG0811NDProduct Summary Power BlockQ1 Q2 FeaturesVDS 25 25 V Dual asymmetric N-channel OptiMOS5 MOSFETRDS(on),max VGS=10 V 3 0.8 mW Logic level (4.5V rated)VGS=4.5 V 4 1.1 Optimized for high performance buck convertersID 50 50 A Qualified according to JEDEC1) for target applicationsS1/D2 (VPhase) (5) (4)D1 (Vin) Pb-free lead plating; RoHS c

Datasheet: AUIRFSA8409-7P , BF999 , BSC012N06NS , BSC025N08LS5 , BSC027N10NS5 , BSC037N08NS5T , BSC079N03LSCG , BSC220N20NSFD , IRLB4132 , BSZ018NE2LSI , BSZ068N06NS , BSZ100N06NS , BSZ15DC02KDH , BSZ160N10NS3 , BSZ215CH , DF11MR12W1M1PB11 , DF23MR12W1M1PB11 .

History: SI4622DY | VBZL80N03

Keywords - BSG0810NDI MOSFET datasheet

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