DF23MR12W1M1PB11 Datasheet and Replacement
Type Designator: DF23MR12W1M1PB11
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 25 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 7.2 nS
Cossⓘ - Output Capacitance: 110 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
Package: MODULE
DF23MR12W1M1PB11 substitution
DF23MR12W1M1PB11 Datasheet (PDF)
df23mr12w1m1p b11.pdf

DF23MR12W1M1P_B11EasyPACK Modul mit CoolSiC Trench MOSFET und PressFIT / NTC / TIMEasyPACK module with CoolSiC Trench MOSFET and PressFIT / NTC / TIMVorlufige Daten / Preliminary Data V = 1200VDSSI = 25A / I = 50AD nom DRMPotentielle Anwendungen Potential Applications Solar Anwendungen Solar applicationsElektrische Eigenschaften Electrical Features
Datasheet: BSG0810NDI , BSZ018NE2LSI , BSZ068N06NS , BSZ100N06NS , BSZ15DC02KDH , BSZ160N10NS3 , BSZ215CH , DF11MR12W1M1PB11 , 10N65 , F3L15MR12W2M1B69 , FF45MR12W1M1B11 , IAUA120N04S5N014 , IAUA180N04S5N012 , IAUA200N04S5N010 , IAUC100N04S6L014 , IAUC100N04S6L020 , IAUC100N04S6L025 .
History: KRF7317 | NX7002BK | RU1H130Q | CED85A3 | AP70SL380AH | AP99T06AGP-HF | CPMF-1200-S160B
Keywords - DF23MR12W1M1PB11 MOSFET datasheet
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DF23MR12W1M1PB11 replacement
History: KRF7317 | NX7002BK | RU1H130Q | CED85A3 | AP70SL380AH | AP99T06AGP-HF | CPMF-1200-S160B



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