IAUA120N04S5N014 PDF and Equivalents Search

 

IAUA120N04S5N014 Specs and Replacement

Type Designator: IAUA120N04S5N014

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 136 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 120 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4 nS

Cossⓘ - Output Capacitance: 990 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0014 Ohm

Package: HSOF-5

IAUA120N04S5N014 substitution

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IAUA120N04S5N014 datasheet

 0.1. Size:669K  infineon
iaua120n04s5n014.pdf pdf_icon

IAUA120N04S5N014

IAUA120N04S5N014 OptiMOS -5 Power-Transistor Product Summary VDS 40 V RDS(on),max 1.4 mW ID 120 A Features PG-HSOF-5 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Normal Level AEC Q101 qualified MSL3 up to 260 C peak reflow 1 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested 1 ... See More ⇒

 9.1. Size:671K  infineon
iaua180n04s5n012.pdf pdf_icon

IAUA120N04S5N014

IAUA180N04S5N012 OptiMOS -5 Power-Transistor Product Summary VDS 40 V RDS(on),max 1.2 mW ID 180 A Features PG-HSOF-5 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Normal Level AEC Q101 qualified MSL3 up to 260 C peak reflow 1 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested 1 ... See More ⇒

Detailed specifications: BSZ100N06NS, BSZ15DC02KDH, BSZ160N10NS3, BSZ215CH, DF11MR12W1M1PB11, DF23MR12W1M1PB11, F3L15MR12W2M1B69, FF45MR12W1M1B11, 2SK3568, IAUA180N04S5N012, IAUA200N04S5N010, IAUC100N04S6L014, IAUC100N04S6L020, IAUC100N04S6L025, IAUC100N04S6N015, IAUC100N04S6N022, IAUC100N04S6N028

Keywords - IAUA120N04S5N014 MOSFET specs

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