IAUC100N04S6N028 Datasheet and Replacement
Type Designator: IAUC100N04S6N028
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 62 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 100 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 2 nS
Cossⓘ - Output Capacitance: 429 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.00286 Ohm
Package: TDSON-8
- MOSFET Cross-Reference Search
IAUC100N04S6N028 Datasheet (PDF)
iauc100n04s6n015.pdf
IAUC100N04S6N015OptiMOS- 6 Power-TransistorProduct SummaryVDS 40 VRDS(on),max 1.5mWID 100 AFeaturesPG-TDSON-8 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Normal Level AEC Q101 qualified MSL1 up to 260C peak reflow1 175C operating temperature1 Green Product (RoHS compliant) 100% Avalanche teste
iauc100n04s6n028.pdf
IAUC100N04S6N028OptiMOS- 6 Power-TransistorProduct SummaryVDS 40 VRDS(on),max 2.8mWID 100 AFeaturesPG-TDSON-8 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Normal Level AEC Q101 qualified MSL1 up to 260C peak reflow1 175C operating temperature1 Green Product (RoHS compliant) 100% Avalanche teste
iauc100n04s6n022.pdf
IAUC100N04S6N022OptiMOS- 6 Power-TransistorProduct SummaryVDS 40 VRDS(on),max 2.2mWID 100 AFeaturesPG-TDSON-8 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Normal Level AEC Q101 qualified MSL1 up to 260C peak reflow1 175C operating temperature1 Green Product (RoHS compliant) 100% Avalanche teste
Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , IRFZ48N , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .
History: MDP06N033TH | PP9C15AK | IRF7379 | SI2308 | SSF2N60D1 | AP65WN2K3I | SWP062R68E7T
Keywords - IAUC100N04S6N028 MOSFET datasheet
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IAUC100N04S6N028 replacement
History: MDP06N033TH | PP9C15AK | IRF7379 | SI2308 | SSF2N60D1 | AP65WN2K3I | SWP062R68E7T
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