IAUC24N10S5L300 MOSFET Datasheet: N-Ch, 100V, 24A. Full specification with pinout and replacement list

IAUC24N10S5L300 Specs and Replacement

Type Designator: IAUC24N10S5L300

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 38 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 24 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 1 nS

Cossⓘ - Output Capacitance: 93 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm

Package: TDSON-8

IAUC24N10S5L300 substitution

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IAUC24N10S5L300 datasheet

0.1. Size:783K infineon
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IAUC24N10S5L300 OptiMOSTM-5 Power-Transistor Product Summary VDS 100 V RDS(on) 30 mW ID 24 A Features PG-TDSON-8 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Logic level AEC Q101 qualified MSL1 up to 260 C peak reflow 1 Green product (RoHS compliant) 1 100% Avalanche tested Feasible for automatic optical inspe... See More ⇒

9.1. Size:881K infineon
iauc28n08s5l230.pdf pdf_icon

IAUC28N08S5L230 OptiMOS -5 Power-Transistor Product Summary VDS 80 V Features RDS(on) 23 mW OptiMOS - power MOSFET for automotive applications ID 28 A N-channel - Enhancement mode - Logic Level MSL1 up to 260 C peak reflow PG-TDSON-8 175 C operating temperature Green product (RoHS compliant) 100% Avalanche tested 1 Quality Features Infineon Au... See More ⇒

Detailed specifications: IAUC100N04S6N022, IAUC100N04S6N028, IAUC100N08S5N043, IAUC100N10S5L040, IAUC120N04S6L009, IAUC120N04S6L012, IAUC120N04S6N010, IAUC120N04S6N013, 75N75, IAUC28N08S5L230, IAUC60N04S6L039, IAUC60N04S6N044, IAUC70N08S5N074, IAUC80N04S6L032, IAUC80N04S6N036, IAUC90N10S5N062, IAUS165N08S5N029