All MOSFET. IAUC24N10S5L300 Datasheet

 

IAUC24N10S5L300 Datasheet and Replacement


   Type Designator: IAUC24N10S5L300
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 38 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 24 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 1 nS
   Cossⓘ - Output Capacitance: 93 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
   Package: TDSON-8
 

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IAUC24N10S5L300 Datasheet (PDF)

 0.1. Size:783K  infineon
 iauc24n10s5l300.pdf pdf_icon

IAUC24N10S5L300

IAUC24N10S5L300OptiMOSTM-5 Power-TransistorProduct SummaryVDS 100 VRDS(on) 30mWID 24 AFeaturesPG-TDSON-8 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Logic level AEC Q101 qualified MSL1 up to 260C peak reflow1 Green product (RoHS compliant)1 100% Avalanche tested Feasible for automatic optical inspe

 9.1. Size:881K  infineon
 iauc28n08s5l230.pdf pdf_icon

IAUC24N10S5L300

IAUC28N08S5L230OptiMOS-5 Power-TransistorProduct SummaryVDS 80 VFeaturesRDS(on) 23mW OptiMOS - power MOSFET for automotive applicationsID 28 A N-channel - Enhancement mode - Logic Level MSL1 up to 260C peak reflowPG-TDSON-8 175C operating temperature Green product (RoHS compliant) 100% Avalanche tested1Quality Features Infineon Au

Datasheet: IAUC100N04S6N022 , IAUC100N04S6N028 , IAUC100N08S5N043 , IAUC100N10S5L040 , IAUC120N04S6L009 , IAUC120N04S6L012 , IAUC120N04S6N010 , IAUC120N04S6N013 , IRF520 , IAUC28N08S5L230 , IAUC60N04S6L039 , IAUC60N04S6N044 , IAUC70N08S5N074 , IAUC80N04S6L032 , IAUC80N04S6N036 , IAUC90N10S5N062 , IAUS165N08S5N029 .

Keywords - IAUC24N10S5L300 MOSFET datasheet

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