IAUC70N08S5N074 PDF and Equivalents Search

 

IAUC70N08S5N074 Specs and Replacement

Type Designator: IAUC70N08S5N074

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 83 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 70 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 1.2 nS

Cossⓘ - Output Capacitance: 274 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0074 Ohm

Package: TDSON-8

IAUC70N08S5N074 substitution

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IAUC70N08S5N074 datasheet

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IAUC70N08S5N074

IAUC70N08S5N074 OptiMOS -5 Power-Transistor Product Summary VDS 80 V RDS(on) 7.4 mW ID 70 A Features N-channel - Enhancement mode PG-TDSON-8 AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) 1 100% Avalanche tested 1 Type Package Marking PG-TDSON-8 5N08074 IAUC70N08S5N074 Maximum ratings, at ... See More ⇒

Detailed specifications: IAUC120N04S6L009, IAUC120N04S6L012, IAUC120N04S6N010, IAUC120N04S6N013, IAUC24N10S5L300, IAUC28N08S5L230, IAUC60N04S6L039, IAUC60N04S6N044, IRF1405, IAUC80N04S6L032, IAUC80N04S6N036, IAUC90N10S5N062, IAUS165N08S5N029, IAUS200N08S5N023, IAUS240N08S5N019, IAUS300N08S5N014, IAUZ18N10S5L420

Keywords - IAUC70N08S5N074 MOSFET specs

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