All MOSFET. IAUC80N04S6L032 Datasheet

 

IAUC80N04S6L032 Datasheet and Replacement


   Type Designator: IAUC80N04S6L032
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 1 nS
   Cossⓘ - Output Capacitance: 330 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.00329 Ohm
   Package: TDSON-8
 

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IAUC80N04S6L032 Datasheet (PDF)

 0.1. Size:665K  infineon
 iauc80n04s6l032.pdf pdf_icon

IAUC80N04S6L032

IAUC80N04S6L032OptiMOS- 6 Power-TransistorProduct SummaryVDS 40 VRDS(on),max 3.2mWID 80 AFeaturesPG-TDSON-8 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Logic Level AEC Q101 qualified MSL1 up to 260C peak reflow1 175C operating temperature1 Green Product (RoHS compliant) 100% Avalanche tested

 3.1. Size:665K  infineon
 iauc80n04s6n036.pdf pdf_icon

IAUC80N04S6L032

IAUC80N04S6N036OptiMOS- 6 Power-TransistorProduct SummaryVDS 40 VRDS(on),max 3.6mWID 80 AFeaturesPG-TDSON-8 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Normal Level AEC Q101 qualified MSL1 up to 260C peak reflow1 175C operating temperature1 Green Product (RoHS compliant) 100% Avalanche tested

Datasheet: IAUC120N04S6L012 , IAUC120N04S6N010 , IAUC120N04S6N013 , IAUC24N10S5L300 , IAUC28N08S5L230 , IAUC60N04S6L039 , IAUC60N04S6N044 , IAUC70N08S5N074 , MMIS60R580P , IAUC80N04S6N036 , IAUC90N10S5N062 , IAUS165N08S5N029 , IAUS200N08S5N023 , IAUS240N08S5N019 , IAUS300N08S5N014 , IAUZ18N10S5L420 , IGLD60R070D1 .

History: SVG041R2NL5 | CEM6056 | HM2319A | D55NF06 | NCEP0112AS | 7N60L-A-TF3 | AOD4158P

Keywords - IAUC80N04S6L032 MOSFET datasheet

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