IAUC90N10S5N062 PDF and Equivalents Search

 

IAUC90N10S5N062 Specs and Replacement

Type Designator: IAUC90N10S5N062

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 115 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 90 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 2 nS

Cossⓘ - Output Capacitance: 403 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0062 Ohm

Package: TDSON-8

IAUC90N10S5N062 substitution

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IAUC90N10S5N062 datasheet

 0.1. Size:779K  infineon
 iauc90n10s5n062.pdf pdf_icon

IAUC90N10S5N062

IAUC90N10S5N062 OptiMOSTM-5 Power-Transistor Product Summary VDS 100 V RDS(on) 6.2 mW ID 90 A Features PG-TDSON-8 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Normal level AEC Q101 qualified MSL1 up to 260 C peak reflow 1 Green product (RoHS compliant) 1 100% Avalanche tested Feasible for automatic optical ins... See More ⇒

Detailed specifications: IAUC120N04S6N013, IAUC24N10S5L300, IAUC28N08S5L230, IAUC60N04S6L039, IAUC60N04S6N044, IAUC70N08S5N074, IAUC80N04S6L032, IAUC80N04S6N036, IRFZ46N, IAUS165N08S5N029, IAUS200N08S5N023, IAUS240N08S5N019, IAUS300N08S5N014, IAUZ18N10S5L420, IGLD60R070D1, IGLD60R190D1, IGO60R070D1

Keywords - IAUC90N10S5N062 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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