All MOSFET. IAUC90N10S5N062 Datasheet

 

IAUC90N10S5N062 Datasheet and Replacement


   Type Designator: IAUC90N10S5N062
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 115 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 90 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 2 nS
   Cossⓘ - Output Capacitance: 403 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0062 Ohm
   Package: TDSON-8
 

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IAUC90N10S5N062 Datasheet (PDF)

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IAUC90N10S5N062

IAUC90N10S5N062OptiMOSTM-5 Power-TransistorProduct SummaryVDS 100 VRDS(on) 6.2mWID 90 AFeaturesPG-TDSON-8 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Normal level AEC Q101 qualified MSL1 up to 260C peak reflow1 Green product (RoHS compliant)1 100% Avalanche tested Feasible for automatic optical ins

Datasheet: IAUC120N04S6N013 , IAUC24N10S5L300 , IAUC28N08S5L230 , IAUC60N04S6L039 , IAUC60N04S6N044 , IAUC70N08S5N074 , IAUC80N04S6L032 , IAUC80N04S6N036 , STP65NF06 , IAUS165N08S5N029 , IAUS200N08S5N023 , IAUS240N08S5N019 , IAUS300N08S5N014 , IAUZ18N10S5L420 , IGLD60R070D1 , IGLD60R190D1 , IGO60R070D1 .

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