IAUS240N08S5N019 PDF and Equivalents Search

 

IAUS240N08S5N019 Specs and Replacement

Type Designator: IAUS240N08S5N019

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 230 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 240 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 1152 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0019 Ohm

Package: HSOG-8-1

IAUS240N08S5N019 substitution

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IAUS240N08S5N019 datasheet

 0.1. Size:382K  infineon
 iaus240n08s5n019.pdf pdf_icon

IAUS240N08S5N019

IAUS240N08S5N019 OptiMOS -5 Power-Transistor Product Summary VDS 80 V RDS(on) 1.9 mW ID 240 A Features N-channel - Enhancement mode PG-HSOG-8-1 AEC qualified Tab MSL1 up to 260 C peak reflow 175 C operating temperature 8 Green product (RoHS compliant) Ultra low Rds(on) 1 Drain 100% Avalanche tested Tab Gate Type Package Marking pi... See More ⇒

 9.1. Size:380K  infineon
 iaus200n08s5n023.pdf pdf_icon

IAUS240N08S5N019

IAUS200N08S5N023 OptiMOS -5 Power-Transistor Product Summary VDS 80 V RDS(on) 2.3 mW ID 200 A Features N-channel - Enhancement mode PG-HSOG-8-1 AEC qualified Tab MSL1 up to 260 C peak reflow 175 C operating temperature 8 Green product (RoHS compliant) Ultra low Rds(on) 1 Drain 100% Avalanche tested Tab Gate Type Package Marking pin... See More ⇒

Detailed specifications: IAUC60N04S6L039, IAUC60N04S6N044, IAUC70N08S5N074, IAUC80N04S6L032, IAUC80N04S6N036, IAUC90N10S5N062, IAUS165N08S5N029, IAUS200N08S5N023, IRF9640, IAUS300N08S5N014, IAUZ18N10S5L420, IGLD60R070D1, IGLD60R190D1, IGO60R070D1, IGOT60R070D1, IGT60R070D1, IGT60R190D1S

Keywords - IAUS240N08S5N019 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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