All MOSFET. IAUZ18N10S5L420 Datasheet

 

IAUZ18N10S5L420 Datasheet and Replacement


   Type Designator: IAUZ18N10S5L420
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 1 nS
   Cossⓘ - Output Capacitance: 68 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.042 Ohm
   Package: TSDSON-8
 

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IAUZ18N10S5L420 Datasheet (PDF)

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IAUZ18N10S5L420

IAUZ18N10S5L420OptiMOS-5 Power-TransistorProduct SummaryVDS 100 VRDS(on),max 42mWID 18 AFeaturesPG-TSDSON-8 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Logic Level AEC Q101 qualified1 MSL1 up to 260C peak reflow 175C operating temperature1 Green Product (RoHS compliant) 100% Avalanche tested

Datasheet: IAUC70N08S5N074 , IAUC80N04S6L032 , IAUC80N04S6N036 , IAUC90N10S5N062 , IAUS165N08S5N029 , IAUS200N08S5N023 , IAUS240N08S5N019 , IAUS300N08S5N014 , EMB04N03H , IGLD60R070D1 , IGLD60R190D1 , IGO60R070D1 , IGOT60R070D1 , IGT60R070D1 , IGT60R190D1S , IPA60R180P7S , IPA60R360P7S .

History: 2SK2826-Z | 4611 | IXFR4N100Q | 2SK3573-S

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