IAUZ18N10S5L420 MOSFET Datasheet: N-Ch, 100V, 18A. Full specification with pinout and replacement list

IAUZ18N10S5L420 Specs and Replacement

Type Designator: IAUZ18N10S5L420

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 30 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 1 nS

Cossⓘ - Output Capacitance: 68 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.042 Ohm

Package: TSDSON-8

IAUZ18N10S5L420 substitution

- MOSFET ⓘ Cross-Reference Search

IAUZ18N10S5L420 datasheet

0.1. Size:780K infineon
iauz18n10s5l420.pdf pdf_icon

IAUZ18N10S5L420 OptiMOS -5 Power-Transistor Product Summary VDS 100 V RDS(on),max 42 mW ID 18 A Features PG-TSDSON-8 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Logic Level AEC Q101 qualified 1 MSL1 up to 260 C peak reflow 175 C operating temperature 1 Green Product (RoHS compliant) 100% Avalanche tested ... See More ⇒

Detailed specifications: IAUC70N08S5N074, IAUC80N04S6L032, IAUC80N04S6N036, IAUC90N10S5N062, IAUS165N08S5N029, IAUS200N08S5N023, IAUS240N08S5N019, IAUS300N08S5N014, AON7403, IGLD60R070D1, IGLD60R190D1, IGO60R070D1, IGOT60R070D1, IGT60R070D1, IGT60R190D1S, IPA60R180P7S, IPA60R360P7S