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IPB100N12S3-05 Spec and Replacement


   Type Designator: IPB100N12S3-05
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 2520 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0048 Ohm
   Package: TO263

 IPB100N12S3-05 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPB100N12S3-05 Specs

 ..1. Size:405K  infineon
ipb100n12s3-05 ipi100n12s3-05 ipp100n12s3-05.pdf pdf_icon

IPB100N12S3-05

IPB100N12S3-05 IPI100N12S3-05, IPP100N12S3-05 OptiMOS -T Power-Transistor Product Summary VDS 120 V RDS(on),max (SMD version) 4.8 mW ID 100 A Features OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode Automotive AEC Q101 qualified PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 MSL1 up to 260 C peak reflow 175 C operating temper... See More ⇒

 6.1. Size:186K  infineon
ipb100n10s3-05 ipi100n10s3-05 ipp100n10s3-05.pdf pdf_icon

IPB100N12S3-05

IPB100N10S3-05 IPI100N10S3-05, IPP100N10S3-05 OptiMOS -T Power-Transistor Product Summary V 100 V DS R (SMD version) 4.8 m DS(on),max I 100 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) 100% Aval... See More ⇒

 6.2. Size:191K  infineon
ipi100n10s3-05 ipp100n10s3-05 ipb100n10s3-05.pdf pdf_icon

IPB100N12S3-05

IPB100N10S3-05 IPI100N10S3-05, IPP100N10S3-05 OptiMOS -T Power-Transistor Product Summary V 100 V DS R (SMD version) 4.8 m DS(on),max I 100 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) 100% Aval... See More ⇒

 7.1. Size:159K  infineon
ipb100n06s2l-05 ipp100n06s2l-05.pdf pdf_icon

IPB100N12S3-05

IPB100N06S2L-05 IPP100N06S2L-05 OptiMOS Power-Transistor Product Summary Features V 55 V DS N-channel Logic Level - Enhancement mode R (SMD version) 4.4 m DS(on),max Automotive AEC Q101 qualified I 100 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO263-3-2 PG-TO220-3-1 Green package (lead free) Ultra low Rds(on) 100% Avala... See More ⇒

Detailed specifications: IGT60R070D1 , IGT60R190D1S , IPA60R180P7S , IPA60R360P7S , IPAN60R180P7S , IPAN65R650CE , IPB015N04N6 , IPB08CN10NG , IRF740 , IPB120N10S4-03 , IPB120N10S4-05 , IPB120P04P4L-03 , IPB180N04S4L-01 , IPB180N04S4L-H0 , IPB180N08S4-02 , IPB180N10S4-02 , IPB180N10S4-03 .

Keywords - IPB100N12S3-05 MOSFET specs

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