IPB180N10S4-03 Specs and Replacement
Type Designator: IPB180N10S4-03
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 250 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 180 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 10 nS
Cossⓘ -
Output Capacitance: 2460 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0033 Ohm
Package: TO263-7
IPB180N10S4-03 substitution
- MOSFET ⓘ Cross-Reference Search
IPB180N10S4-03 datasheet
..1. Size:256K infineon
ipb180n10s4-03.pdf 
IPB180N10S4-03 OptiMOSTM-T2 Power-Transistor Product Summary VDS 100 V RDS(on) 3.3 mW ID 180 A Features N-channel - Normal Level - Enhancement mode PG-TO263-7-3 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) 100% Avalanche tested Type Package Marking IPB180N10S4-03 PG-TO263-7-3 4N1003 Maximum ratin... See More ⇒
7.1. Size:351K infineon
ipb180n04s4-00.pdf
IPB180N04S4-00 OptiMOS -T2 Power-Transistor Product Summary VDS 40 V RDS(on) 0.98 mW ID 180 A Features N-channel - Enhancement mode PG-TO263-7-3 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche tested Type Package Marking IPB180N04S4-00 PG-TO263-7-3 4N0400 Maxim... See More ⇒
7.2. Size:161K infineon
ipb180n03s4l-h0 ipb180n03s4l-h0 ds 1 0.pdf
IPB180N03S4L-H0 OptiMOS -T2 Power-Transistor Product Summary V 30 V DS R 0.95 m DS(on) I 180 A D Features N-channel - Enhancement mode PG-TO263-7-3 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green package (RoHS compliant) Ultra low Rds(on) 100% Avalanche tested Type Package Marking IPB180N03S4L-H0 PG-TO263-7-3 4N... See More ⇒
7.3. Size:201K infineon
ipb180n08s4-02.pdf
IPB180N08S4-02 OptiMOS -T2 Power-Transistor Product Summary V 80 V DS R 2.2 mW DS(on),max I 180 A D Features N-channel - Enhancement mode PG-TO263-7-3 AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Ultra low RDSon Ultra high ID Type Package Marking IPB180N08... See More ⇒
7.4. Size:176K infineon
ipb180n06s4-h1 ipb180n06s4-h1 ds 10.pdf
IPB180N06S4-H1 OptiMOS -T2 Power-Transistor Product Summary V 60 V DS R 1.7 m DS(on),max I 180 A D Features PG-TO263-7-3 N-channel - Enhancement mode AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Ultra low RDSon Ultra high ID Type Package Marking IPB180N0... See More ⇒
7.5. Size:162K infineon
ipb180n04s4-00 ds 1 0.pdf
IPB180N04S4-00 OptiMOS -T2 Power-Transistor Product Summary V 40 V DS R 0.98 m DS(on) I 180 A D Features N-channel - Enhancement mode PG-TO263-7-3 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche tested Type Package Marking IPB180N04S4-00 PG-TO263-7-3 4N040... See More ⇒
7.6. Size:162K infineon
ipb180n04s4-h0 ipb180n04s4-h0 ds 1 0.pdf
IPB180N04S4-H0 OptiMOS -T2 Power-Transistor Product Summary V 40 V DS R 1.1 m DS(on) I 180 A D Features N-channel - Enhancement mode PG-TO263-7-3 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche tested Type Package Marking IPB180N04S4-H0 PG-TO263-7-3 4N04H0... See More ⇒
7.7. Size:213K infineon
ipb180n04s4l-01.pdf
Data Sheet IPB180N04S4L-01 OptiMOSTM-T2 Power-Transistor Product Summary VDS 40 V RDS(on) 1.2 m ID 180 A Features N-channel Logic Level - Enhancement mode PG-TO263-7-3 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) 100% Avalanche tested Type Package Marking IPB180N04S4L-01 PG-TO263-7-3 4N04L01 Ma... See More ⇒
7.8. Size:213K infineon
ipb180n04s4l-h0.pdf
Data Sheet IPB180N04S4L-H0 OptiMOSTM-T2 Power-Transistor Product Summary VDS 40 V RDS(on) 1.0 m ID 180 A Features N-channel Logic Level - Enhancement mode PG-TO263-7-3 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) 100% Avalanche tested Type Package Marking IPB180N04S4L-H0 PG-TO263-7-3 4N04LH0 Ma... See More ⇒
7.9. Size:183K infineon
ipb180n04s3-02 ipb180n04s3-02 ds 1 0.pdf
IPB180N04S3-02 OptiMOS -T Power-Transistor Product Summary V 40 V DS R 1.5 m DS(on) I 180 A D Features N-channel - Enhancement mode PG-TO263-7-3 Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green package (RoHS compliant) Ultra low Rds(on) 100% Avalanche tested Type Marking Package IPB180N04S3-02 PG-... See More ⇒
7.10. Size:162K infineon
ipb180n04s4-01 ipb180n04s4-01 ds 1 0.pdf
IPB180N04S4-01 OptiMOS -T2 Power-Transistor Product Summary V 40 V DS R 1.3 m DS(on) I 180 A D Features N-channel - Enhancement mode PG-TO263-7-3 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche tested Type Package Marking IPB180N04S4-01 PG-TO263-7-3 4N0401... See More ⇒
7.11. Size:161K infineon
ipb180n03s4l-01 ipb180n03s4l-01 ds 1 0.pdf
IPB180N03S4L-01 OptiMOS -T2 Power-Transistor Product Summary V 30 V DS R 1.05 m DS(on) I 180 A D Features N-channel - Enhancement mode PG-TO263-7-3 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green package (RoHS compliant) Ultra low Rds(on) 100% Avalanche tested Type Package Marking IPB180N03S4L-01 PG-TO263-7-3 4N... See More ⇒
Detailed specifications: IPB100N12S3-05
, IPB120N10S4-03
, IPB120N10S4-05
, IPB120P04P4L-03
, IPB180N04S4L-01
, IPB180N04S4L-H0
, IPB180N08S4-02
, IPB180N10S4-02
, IRF640
, IPB180P04P4-03
, IPB180P04P4L-02
, IPB240N03S4L-R8
, IPB240N04S4-1R0
, IPB240N04S4-R9
, IPB35N10S3L-26
, IPB50N12S3L-15
, IPB60R040CFD7
.
Keywords - IPB180N10S4-03 MOSFET specs
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IPB180N10S4-03 replacement
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