IPB180N10S4-03. Аналоги и основные параметры
Наименование производителя: IPB180N10S4-03
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ
- Максимальная рассеиваемая мощность: 250 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 180 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
tr ⓘ -
Время нарастания: 10 ns
Cossⓘ - Выходная емкость: 2460 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0033 Ohm
Тип корпуса: TO263-7
Аналог (замена) для IPB180N10S4-03
- подборⓘ MOSFET транзистора по параметрам
IPB180N10S4-03 даташит
..1. Size:256K infineon
ipb180n10s4-03.pdf 
IPB180N10S4-03 OptiMOSTM-T2 Power-Transistor Product Summary VDS 100 V RDS(on) 3.3 mW ID 180 A Features N-channel - Normal Level - Enhancement mode PG-TO263-7-3 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) 100% Avalanche tested Type Package Marking IPB180N10S4-03 PG-TO263-7-3 4N1003 Maximum ratin
7.1. Size:351K infineon
ipb180n04s4-00.pdf 
IPB180N04S4-00 OptiMOS -T2 Power-Transistor Product Summary VDS 40 V RDS(on) 0.98 mW ID 180 A Features N-channel - Enhancement mode PG-TO263-7-3 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche tested Type Package Marking IPB180N04S4-00 PG-TO263-7-3 4N0400 Maxim
7.2. Size:161K infineon
ipb180n03s4l-h0 ipb180n03s4l-h0 ds 1 0.pdf 
IPB180N03S4L-H0 OptiMOS -T2 Power-Transistor Product Summary V 30 V DS R 0.95 m DS(on) I 180 A D Features N-channel - Enhancement mode PG-TO263-7-3 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green package (RoHS compliant) Ultra low Rds(on) 100% Avalanche tested Type Package Marking IPB180N03S4L-H0 PG-TO263-7-3 4N
7.3. Size:201K infineon
ipb180n08s4-02.pdf 
IPB180N08S4-02 OptiMOS -T2 Power-Transistor Product Summary V 80 V DS R 2.2 mW DS(on),max I 180 A D Features N-channel - Enhancement mode PG-TO263-7-3 AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Ultra low RDSon Ultra high ID Type Package Marking IPB180N08
7.4. Size:176K infineon
ipb180n06s4-h1 ipb180n06s4-h1 ds 10.pdf 
IPB180N06S4-H1 OptiMOS -T2 Power-Transistor Product Summary V 60 V DS R 1.7 m DS(on),max I 180 A D Features PG-TO263-7-3 N-channel - Enhancement mode AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Ultra low RDSon Ultra high ID Type Package Marking IPB180N0
7.5. Size:162K infineon
ipb180n04s4-00 ds 1 0.pdf 
IPB180N04S4-00 OptiMOS -T2 Power-Transistor Product Summary V 40 V DS R 0.98 m DS(on) I 180 A D Features N-channel - Enhancement mode PG-TO263-7-3 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche tested Type Package Marking IPB180N04S4-00 PG-TO263-7-3 4N040
7.6. Size:162K infineon
ipb180n04s4-h0 ipb180n04s4-h0 ds 1 0.pdf 
IPB180N04S4-H0 OptiMOS -T2 Power-Transistor Product Summary V 40 V DS R 1.1 m DS(on) I 180 A D Features N-channel - Enhancement mode PG-TO263-7-3 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche tested Type Package Marking IPB180N04S4-H0 PG-TO263-7-3 4N04H0
7.7. Size:213K infineon
ipb180n04s4l-01.pdf 
Data Sheet IPB180N04S4L-01 OptiMOSTM-T2 Power-Transistor Product Summary VDS 40 V RDS(on) 1.2 m ID 180 A Features N-channel Logic Level - Enhancement mode PG-TO263-7-3 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) 100% Avalanche tested Type Package Marking IPB180N04S4L-01 PG-TO263-7-3 4N04L01 Ma
7.8. Size:213K infineon
ipb180n04s4l-h0.pdf 
Data Sheet IPB180N04S4L-H0 OptiMOSTM-T2 Power-Transistor Product Summary VDS 40 V RDS(on) 1.0 m ID 180 A Features N-channel Logic Level - Enhancement mode PG-TO263-7-3 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) 100% Avalanche tested Type Package Marking IPB180N04S4L-H0 PG-TO263-7-3 4N04LH0 Ma
7.9. Size:183K infineon
ipb180n04s3-02 ipb180n04s3-02 ds 1 0.pdf 
IPB180N04S3-02 OptiMOS -T Power-Transistor Product Summary V 40 V DS R 1.5 m DS(on) I 180 A D Features N-channel - Enhancement mode PG-TO263-7-3 Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green package (RoHS compliant) Ultra low Rds(on) 100% Avalanche tested Type Marking Package IPB180N04S3-02 PG-
7.10. Size:162K infineon
ipb180n04s4-01 ipb180n04s4-01 ds 1 0.pdf 
IPB180N04S4-01 OptiMOS -T2 Power-Transistor Product Summary V 40 V DS R 1.3 m DS(on) I 180 A D Features N-channel - Enhancement mode PG-TO263-7-3 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche tested Type Package Marking IPB180N04S4-01 PG-TO263-7-3 4N0401
7.11. Size:161K infineon
ipb180n03s4l-01 ipb180n03s4l-01 ds 1 0.pdf 
IPB180N03S4L-01 OptiMOS -T2 Power-Transistor Product Summary V 30 V DS R 1.05 m DS(on) I 180 A D Features N-channel - Enhancement mode PG-TO263-7-3 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green package (RoHS compliant) Ultra low Rds(on) 100% Avalanche tested Type Package Marking IPB180N03S4L-01 PG-TO263-7-3 4N
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History: ME60N03AS
| ME60P06T
| BSL211SP
