IPB240N03S4L-R8 Datasheet and Replacement
Type Designator: IPB240N03S4L-R8
Marking Code: 4N03LR8
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
|Id| ⓘ - Maximum Drain Current: 240 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Qg ⓘ - Total Gate Charge: 290 nC
tr ⓘ - Rise Time: 37 nS
Cossⓘ - Output Capacitance: 4500 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.00076 Ohm
Package: TO263-7
IPB240N03S4L-R8 substitution
IPB240N03S4L-R8 Datasheet (PDF)
ipb240n03s4l-r8.pdf
IPB240N03S4L-R8OptiMOS-T2 Power-TransistorProduct SummaryV 30 VDSR 0.76mWDS(on)I 240 ADFeatures N-channel - Enhancement modePG-TO263-7-3 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) Ultra low Rds(on) 100% Avalanche testedType Package MarkingIPB240N03S4L-R8 PG-TO263-7-3 4N03
ipb240n04s4-r9.pdf
IPB240N04S4-R9OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR 0.87mWDS(on)I 240 ADFeatures N-channel - Enhancement modePG-TO263-7-3 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche testedType Package MarkingIPB240N04S4-R9 PG-TO263-7-3 4N04R9
ipb240n04s4-1r0.pdf
IPB240N04S4-1R0OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR 1.0mWDS(on)I 240 ADFeatures N-channel - Enhancement modePG-TO263-7-3 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche testedType Package MarkingIPB240N04S4-1R0 PG-TO263-7-3 4N041
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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