IPB240N04S4-R9 Datasheet and Replacement
Type Designator: IPB240N04S4-R9
Marking Code: 4N04R9
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 240 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Qg ⓘ - Total Gate Charge: 220 nC
tr ⓘ - Rise Time: 28 nS
Cossⓘ - Output Capacitance: 3850 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.00087 Ohm
Package: TO263-7
IPB240N04S4-R9 substitution
IPB240N04S4-R9 Datasheet (PDF)
ipb240n04s4-r9.pdf
IPB240N04S4-R9OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR 0.87mWDS(on)I 240 ADFeatures N-channel - Enhancement modePG-TO263-7-3 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche testedType Package MarkingIPB240N04S4-R9 PG-TO263-7-3 4N04R9
ipb240n04s4-1r0.pdf
IPB240N04S4-1R0OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR 1.0mWDS(on)I 240 ADFeatures N-channel - Enhancement modePG-TO263-7-3 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche testedType Package MarkingIPB240N04S4-1R0 PG-TO263-7-3 4N041
ipb240n03s4l-r8.pdf
IPB240N03S4L-R8OptiMOS-T2 Power-TransistorProduct SummaryV 30 VDSR 0.76mWDS(on)I 240 ADFeatures N-channel - Enhancement modePG-TO263-7-3 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) Ultra low Rds(on) 100% Avalanche testedType Package MarkingIPB240N03S4L-R8 PG-TO263-7-3 4N03
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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