STD20N06-1
MOSFET. Datasheet pdf. Equivalent
Type Designator: STD20N06-1
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 60
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 20
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 60
nC
trⓘ - Rise Time: 280
nS
Cossⓘ -
Output Capacitance: 350
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.03
Ohm
Package:
IPAK
STD20N06-1
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STD20N06-1
Datasheet (PDF)
8.1. Size:342K st
std20nf06t4.pdf 
STD20NF06N-channel 60V - 0.032 - 24A - DPAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTD20NF06 60V
8.3. Size:345K st
std20nf06.pdf
STD20NF06N-channel 60V - 0.032 - 24A - DPAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTD20NF06 60V
8.4. Size:105K st
std20ne03l.pdf
STD20NE03LN - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFETTYPE VDSS RDS(on ) IDSTD20NE03L 30 V
8.5. Size:410K st
std20nf06l std20nf06l-1.pdf
STD20NF06LSTD20NF06L-1N-channel 60V - 0.032 - 24A - DPAK - IPAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTD20NF06L 60V
8.6. Size:328K st
std20nf10t4.pdf
STD20NF10N-channel 100V - 0.038 - 100A - DPAKLow gate charge STripFET II Power MOSFETFeaturesType VDSS RDS(on) IDSTD20NF10 100V
8.7. Size:909K st
std20nf20 stf20nf20 stp20nf20.pdf
STD20NF20STF20NF20, STP20NF20N-channel 200 V, 0.10 , 18 A DPAK, TO-220, TO-220FPlow gate charge STripFET Power MOSFETFeaturesType VDSS RDS(on) ID PWSTD20NF20 200 V
8.8. Size:331K st
std20nf10.pdf
STD20NF10N-channel 100V - 0.038 - 100A - DPAKLow gate charge STripFET II Power MOSFETFeaturesType VDSS RDS(on) IDSTD20NF10 100V
8.9. Size:106K samhop
stu20n15 std20n15.pdf
GrerrPPrPrProSTU/D20N15aS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) TypVDSS IDRugged and reliable.58 @ VGS=10VTO-252 and TO-251 Package.150V 20A65 @ VGS=4.5VGGSSSTU SERIESSTD SERIES( )TO - 252AA D- PAK
8.10. Size:1181K umw-ic
std20nf06l.pdf
R STD20NF06LUMW60V N-Channel Enhancement Mode Power MOSFETUMW STD20NF06LGeneral DescriptionThe STD20NF06L uses advanced trench technology anddesign to provide excellent RDS(ON) with low gate charge.It can be used in a wide variety of applications.FeaturesVDS = 60V,ID =30ARDS(ON),25m(Typ) @ VGS =10VRDS(ON),30m(Typ) @ VGS =4.5VAdvanced Trench TechnologyExcellent RD
8.11. Size:286K inchange semiconductor
std20nf20.pdf
isc N-Channel MOSFET Transistor STD20NF20FEATURESDrain Current : I = 18A@ T =25D CDrain Source Voltage: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 125m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.
8.12. Size:286K inchange semiconductor
std20nf06l.pdf
isc N-Channel MOSFET Transistor STD20NF06LFEATURESDrain Current : I = 24A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 40m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen
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