STD20N06-1. Аналоги и основные параметры
Наименование производителя: STD20N06-1
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ
- Максимальная рассеиваемая мощность: 60 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 20 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
tr ⓘ -
Время нарастания: 280 ns
Cossⓘ - Выходная емкость: 350 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.03 Ohm
Тип корпуса: IPAK
Аналог (замена) для STD20N06-1
- подборⓘ MOSFET транзистора по параметрам
STD20N06-1 даташит
8.1. Size:342K st
std20nf06t4.pdf 
STD20NF06 N-channel 60V - 0.032 - 24A - DPAK STripFET II Power MOSFET General features Type VDSS RDS(on) ID STD20NF06 60V
8.2. Size:414K st
std20nf06lt4 std20nf06l std20nf06l-1.pdf 
STD20NF06L STD20NF06L-1 N-channel 60V - 0.032 - 24A - DPAK - IPAK STripFET II Power MOSFET General features Type VDSS RDS(on) ID STD20NF06L 60V
8.3. Size:345K st
std20nf06.pdf 
STD20NF06 N-channel 60V - 0.032 - 24A - DPAK STripFET II Power MOSFET General features Type VDSS RDS(on) ID STD20NF06 60V
8.4. Size:105K st
std20ne03l.pdf 
STD20NE03L N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET TYPE VDSS RDS(on ) ID STD20NE03L 30 V
8.5. Size:410K st
std20nf06l std20nf06l-1.pdf 
STD20NF06L STD20NF06L-1 N-channel 60V - 0.032 - 24A - DPAK - IPAK STripFET II Power MOSFET General features Type VDSS RDS(on) ID STD20NF06L 60V
8.6. Size:328K st
std20nf10t4.pdf 
STD20NF10 N-channel 100V - 0.038 - 100A - DPAK Low gate charge STripFET II Power MOSFET Features Type VDSS RDS(on) ID STD20NF10 100V
8.7. Size:909K st
std20nf20 stf20nf20 stp20nf20.pdf 
STD20NF20 STF20NF20, STP20NF20 N-channel 200 V, 0.10 , 18 A DPAK, TO-220, TO-220FP low gate charge STripFET Power MOSFET Features Type VDSS RDS(on) ID PW STD20NF20 200 V
8.8. Size:331K st
std20nf10.pdf 
STD20NF10 N-channel 100V - 0.038 - 100A - DPAK Low gate charge STripFET II Power MOSFET Features Type VDSS RDS(on) ID STD20NF10 100V
8.9. Size:106K samhop
stu20n15 std20n15.pdf 
Gre r r P Pr Pr Pro STU/D20N15 a S mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (m ) Typ VDSS ID Rugged and reliable. 58 @ VGS=10V TO-252 and TO-251 Package. 150V 20A 65 @ VGS=4.5V G G S S STU SERIES STD SERIES ( ) TO - 252AA D- PAK
8.10. Size:1181K umw-ic
std20nf06l.pdf 
R STD20NF06L UMW 60V N-Channel Enhancement Mode Power MOSFET UMW STD20NF06L General Description The STD20NF06L uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Features VDS = 60V,ID =30A RDS(ON),25m (Typ) @ VGS =10V RDS(ON),30m (Typ) @ VGS =4.5V Advanced Trench Technology Excellent RD
8.11. Size:286K inchange semiconductor
std20nf20.pdf 
isc N-Channel MOSFET Transistor STD20NF20 FEATURES Drain Current I = 18A@ T =25 D C Drain Source Voltage V = 200V(Min) DSS Static Drain-Source On-Resistance R = 125m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive.
8.12. Size:286K inchange semiconductor
std20nf06l.pdf 
isc N-Channel MOSFET Transistor STD20NF06L FEATURES Drain Current I = 24A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 40m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen
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