IPC100N04S5-2R8
MOSFET. Datasheet pdf. Equivalent
Type Designator: IPC100N04S5-2R8
Marking Code: 5N042R8
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 75
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.4
V
|Id|ⓘ - Maximum Drain Current: 100
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 34
nC
trⓘ - Rise Time: 3
nS
Cossⓘ -
Output Capacitance: 550
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0028
Ohm
Package: TDSON-8-33
IPC100N04S5-2R8
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IPC100N04S5-2R8
Datasheet (PDF)
0.1. Size:396K infineon
ipc100n04s5-2r8.pdf
IPC100N04S5-2R8OptiMOS-5 Power-TransistorProduct Summary VDS 40 V RDS(on),max 2.8 mW ID 100 A FeaturesPG-TDSON-8-33 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Normal Level AEC Q101 qualified MSL1 up to 260C peak reflow1 175C operating temperature1 Green Product (RoHS compliant) 100% Avalanc
2.1. Size:422K infineon
ipc100n04s5-1r2.pdf
IPC100N04S5-1R2OptiMOS-5 Power-TransistorProduct Summary VDS 40 V RDS(on),max 1.2 mW ID 100 A FeaturesPG-TDSON-8-34 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Normal Level AEC Q101 qualified MSL1 up to 260C peak reflow1 175C operating temperature1 Green Product (RoHS compliant) 100% Avalan
2.2. Size:423K infineon
ipc100n04s5-1r9.pdf
IPC100N04S5-1R9OptiMOS-5 Power-TransistorProduct Summary VDS 40 V RDS(on),max 1.9 mW ID 100 A FeaturesPG-TDSON-8-34 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Normal Level AEC Q101 qualified MSL1 up to 260C peak reflow1 175C operating temperature1 Green Product (RoHS compliant) 100% Avalan
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