All MOSFET. IPC70N04S5L-4R2 Datasheet

 

IPC70N04S5L-4R2 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IPC70N04S5L-4R2
   Marking Code: 5N04L4R2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 70 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 22 nC
   trⓘ - Rise Time: 2 nS
   Cossⓘ - Output Capacitance: 280 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0042 Ohm
   Package: TDSON-8-33

 IPC70N04S5L-4R2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPC70N04S5L-4R2 Datasheet (PDF)

 0.1. Size:564K  infineon
 ipc70n04s5l-4r2.pdf

IPC70N04S5L-4R2 IPC70N04S5L-4R2

IPC70N04S5L-4R2OptiMOS-5 Power-TransistorProduct Summary VDS 40 V RDS(on),max 4.2 mW ID 70 A FeaturesPG-TDSON-8-33 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Logic Level AEC Q101 qualified MSL1 up to 260C peak reflow1 175C operating temperature1 Green Product (RoHS compliant) 100% Avalanch

 4.1. Size:394K  infineon
 ipc70n04s5-4r6.pdf

IPC70N04S5L-4R2 IPC70N04S5L-4R2

IPC70N04S5-4R6OptiMOS-5 Power-TransistorProduct Summary VDS 40 V RDS(on),max 4.6 mW ID 70 A FeaturesPG-TDSON-8-33 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Normal Level AEC Q101 qualified MSL1 up to 260C peak reflow1 175C operating temperature1 Green Product (RoHS compliant) 100% Avalanch

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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