All MOSFET. IPC90N04S5-3R6 Datasheet

 

IPC90N04S5-3R6 Datasheet and Replacement


   Type Designator: IPC90N04S5-3R6
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 63 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 90 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 2 nS
   Cossⓘ - Output Capacitance: 410 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0036 Ohm
   Package: TDSON-8-33
 

 IPC90N04S5-3R6 substitution

   - MOSFET ⓘ Cross-Reference Search

 

IPC90N04S5-3R6 Datasheet (PDF)

 ..1. Size:395K  infineon
 ipc90n04s5-3r6.pdf pdf_icon

IPC90N04S5-3R6

IPC90N04S5-3R6OptiMOS-5 Power-TransistorProduct Summary VDS 40 V RDS(on),max 3.6 mW ID 90 A FeaturesPG-TDSON-8-33 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Normal Level AEC Q101 qualified MSL1 up to 260C peak reflow1 175C operating temperature1 Green Product (RoHS compliant) 100% Avalanch

 4.1. Size:396K  infineon
 ipc90n04s5l-3r3.pdf pdf_icon

IPC90N04S5-3R6

IPC90N04S5L-3R3OptiMOS-5 Power-TransistorProduct Summary VDS 40 V RDS(on),max 3.3 mW ID 90 A FeaturesPG-TDSON-8-33 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Logic Level AEC Q101 qualified MSL1 up to 260C peak reflow1 175C operating temperature1 Green Product (RoHS compliant) 100% Avalanche

Datasheet: IPC100N04S5L-1R1 , IPC100N04S5L-1R5 , IPC100N04S5L-1R9 , IPC100N04S5L-2R6 , IPC50N04S5-5R8 , IPC50N04S5L-5R5 , IPC70N04S5-4R6 , IPC70N04S5L-4R2 , RFP50N06 , IPC90N04S5L-3R3 , IPD090N03LGE8177 , IPD100N04S4L-02 , IPD25DP06LM , IPD25DP06NM , IPD30N12S3L-31 , IPD35N12S3L-24 , IPD380P06NM .

History: NVMFD020N06C | IPD90N04S3-H4 | AFP8452

Keywords - IPC90N04S5-3R6 MOSFET datasheet

 IPC90N04S5-3R6 cross reference
 IPC90N04S5-3R6 equivalent finder
 IPC90N04S5-3R6 lookup
 IPC90N04S5-3R6 substitution
 IPC90N04S5-3R6 replacement

 

 
Back to Top

 


 
.