IPC90N04S5L-3R3 Specs and Replacement

Type Designator: IPC90N04S5L-3R3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 62 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V

|Id| ⓘ - Maximum Drain Current: 90 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 2 nS

Cossⓘ - Output Capacitance: 370 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0033 Ohm

Package: TDSON-8-33

IPC90N04S5L-3R3 substitution

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IPC90N04S5L-3R3 datasheet

 0.1. Size:396K  infineon
 ipc90n04s5l-3r3.pdf pdf_icon

IPC90N04S5L-3R3

IPC90N04S5L-3R3 OptiMOS -5 Power-Transistor Product Summary VDS 40 V RDS(on),max 3.3 mW ID 90 A Features PG-TDSON-8-33 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Logic Level AEC Q101 qualified MSL1 up to 260 C peak reflow 1 175 C operating temperature 1 Green Product (RoHS compliant) 100% Avalanche... See More ⇒

 4.1. Size:395K  infineon
 ipc90n04s5-3r6.pdf pdf_icon

IPC90N04S5L-3R3

IPC90N04S5-3R6 OptiMOS -5 Power-Transistor Product Summary VDS 40 V RDS(on),max 3.6 mW ID 90 A Features PG-TDSON-8-33 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Normal Level AEC Q101 qualified MSL1 up to 260 C peak reflow 1 175 C operating temperature 1 Green Product (RoHS compliant) 100% Avalanch... See More ⇒

Detailed specifications: IPC100N04S5L-1R5, IPC100N04S5L-1R9, IPC100N04S5L-2R6, IPC50N04S5-5R8, IPC50N04S5L-5R5, IPC70N04S5-4R6, IPC70N04S5L-4R2, IPC90N04S5-3R6, 12N60, IPD090N03LGE8177, IPD100N04S4L-02, IPD25DP06LM, IPD25DP06NM, IPD30N12S3L-31, IPD35N12S3L-24, IPD380P06NM, IPD40DP06NM

Keywords - IPC90N04S5L-3R3 MOSFET specs

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