All MOSFET. IPC90N04S5L-3R3 Datasheet

 

IPC90N04S5L-3R3 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IPC90N04S5L-3R3
   Marking Code: 5N04L3R3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 62 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 90 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 30 nC
   trⓘ - Rise Time: 2 nS
   Cossⓘ - Output Capacitance: 370 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0033 Ohm
   Package: TDSON-8-33

 IPC90N04S5L-3R3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPC90N04S5L-3R3 Datasheet (PDF)

 0.1. Size:396K  infineon
 ipc90n04s5l-3r3.pdf

IPC90N04S5L-3R3 IPC90N04S5L-3R3

IPC90N04S5L-3R3OptiMOS-5 Power-TransistorProduct Summary VDS 40 V RDS(on),max 3.3 mW ID 90 A FeaturesPG-TDSON-8-33 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Logic Level AEC Q101 qualified MSL1 up to 260C peak reflow1 175C operating temperature1 Green Product (RoHS compliant) 100% Avalanche

 4.1. Size:395K  infineon
 ipc90n04s5-3r6.pdf

IPC90N04S5L-3R3 IPC90N04S5L-3R3

IPC90N04S5-3R6OptiMOS-5 Power-TransistorProduct Summary VDS 40 V RDS(on),max 3.6 mW ID 90 A FeaturesPG-TDSON-8-33 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Normal Level AEC Q101 qualified MSL1 up to 260C peak reflow1 175C operating temperature1 Green Product (RoHS compliant) 100% Avalanch

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

 

 
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