All MOSFET. IPD25DP06NM Datasheet

 

IPD25DP06NM MOSFET. Datasheet pdf. Equivalent


   Type Designator: IPD25DP06NM
   Marking Code: 25DP06NM
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 28 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 6.5 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 10.6 nC
   trⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 62 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm
   Package: TO252

 IPD25DP06NM Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPD25DP06NM Datasheet (PDF)

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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