IPD25DP06NM MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IPD25DP06NM
Маркировка: 25DP06NM
Тип транзистора: MOSFET
Полярность: P
Максимальная рассеиваемая мощность (Pd): 28 W
Предельно допустимое напряжение сток-исток |Uds|: 60 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 6.5 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 10.6 nC
Время нарастания (tr): 7 ns
Выходная емкость (Cd): 62 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.25 Ohm
Тип корпуса: TO252
Аналог (замена) для IPD25DP06NM
IPD25DP06NM Datasheet (PDF)
ipd25dp06nm.pdf
IPD25DP06NMMOSFETD-PAKOptiMOSTM Power Transistor, -60 VFeaturestab P-Channel Very low on-resistance RDS(on) 100% avalanche tested Normal Level Enhancement mode1 Pb-free lead plating; RoHS compliant3 Halogen-free according to IEC61249-2-21Product validationFully qualified according to JEDEC for Industrial ApplicationsDraintabTable 1 Ke
ipd25dp06lm.pdf
IPD25DP06LMMOSFETD-PAKOptiMOSTM Power Transistor, -60 VFeaturestab P-Channel Very low on-resistance R @ V =4.5 VDS(on) GS 100% avalanche tested Logic Level Enhancement mode1 Pb-free lead plating; RoHS compliant3 Halogen-free according to IEC61249-2-21Product validationFully qualified according to JEDEC for Industrial ApplicationsDrainta
ipd250n06n3.pdf
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ipb26cn10ng ipd25cn10ng ipi26cn10ng ipp26cn10ng.pdf
IPB26CN10N G IPD25CN10N GIPI26CN10N G IPP26CN10N G OptiMOS2 Power-TransistorProduct Summary FeaturesVDS 100 V N-channel, normal levelRDS(on),max (TO252) 25 mW Excellent gate charge x R product (FOM)DS(on)ID 35 A Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1)
ipb26cn10n-g ipd25cn10n-g ipi26cn10n-g ipp26cn10n-g ipu25cn10n-g.pdf
IPB26CN10N G IPD25CN10N GIPI26CN10N G IPP26CN10N G IPU25CN10N GOptiMOS2 Power-TransistorProduct SummaryFeaturesV 100 VDS N-channel, normal levelR 25mDS(on),max (TO252) Excellent gate charge x R product (FOM)DS(on)I 35 AD Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified accordi
ipd25n06s4l-30.pdf
IPD25N06S4L-30OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR 30mDS(on),maxI 25 ADFeaturesPG-TO252-3-11 N-channel - Enhancement mode AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPD25N06S4L-30 PG-TO252-3-11 4N06L30Maximum rat
ipd25n06s2-40.pdf
IPD25N06S2-40OptiMOS Power-TransistorProduct SummaryFeaturesV 55 VDS N-channel - Enhancement modeR (SMD version) 40mDS(on),max Automotive AEC Q101 qualifiedI 29 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO252-3-11 Green package (lead free) Ultra low Rds(on) 100% Avalanche testedType Package MarkingIPD25N06S2
ipd25cn10n.pdf
isc N-Channel MOSFET Transistor IPD25CN10N,IIPD25CN10NFEATURESStatic drain-source on-resistance:RDS(on)25mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONIdeal for high-frequency switching and synchronous rectificationABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
