IPD50N12S3L-15 Specs and Replacement
Type Designator: IPD50N12S3L-15
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 5 nS
Cossⓘ -
Output Capacitance: 730 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
Package: TO252
IPD50N12S3L-15 substitution
- MOSFET ⓘ Cross-Reference Search
IPD50N12S3L-15 datasheet
..1. Size:393K infineon
ipd50n12s3l-15.pdf 
IPD50N12S3L-15 OptiMOS -T Power-Transistor Product Summary VDS 120 V RDS(on),max 15 mW ID 50 A Features OptiMOS - power MOSFET for automotive applications PG-TO252-3-11 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) 100% Avalanche tested Typ... See More ⇒
7.1. Size:296K infineon
ipd50n10s3l-16.pdf 
IPD50N10S3L-16 OptiMOS -T Power-Transistor Product Summary VDS 100 V RDS(on),max 15 mW ID 50 A Features N-channel - Enhancement mode PG-TO252-3-11 Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) 100% Avalanche tested Type Package Marking IPD50N10S3L-16 PG-TO252-3-11 QN10L16 Maximum ... See More ⇒
7.2. Size:177K infineon
ipd50n10s3l-16 ds 1 2.pdf 
IPD50N10S3L-16 OptiMOS -T Power-Transistor Product Summary V 100 V DS R 15 mW DS(on),max I 50 A D Features N-channel - Enhancement mode PG-TO252-3-11 Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) 100% Avalanche tested Type Package Marking IPD50N10S3L-16 PG-TO252-3-11 QN10L16 Ma... See More ⇒
8.1. Size:154K 1
ipd50n06s2l-13.pdf 
IPD50N06S2L-13 OptiMOS Power-Transistor Product Summary Features V 55 V DS N-channel Logic Level - Enhancement mode R (SMD version) 12.7 m DS(on),max Automotive AEC Q101 qualified I 50 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO252-3-11 Green package (lead free) Ultra low Rds(on) 100% Avalanche tested Type Package Mark... See More ⇒
8.2. Size:268K infineon
ipd50n08s4-13.pdf 
IPD50N08S4-13 OptiMOS -T2 Power-Transistor Product Summary VDS 80 V RDS(on),max 13.2 mW ID 50 A Features PG-TO252-3-313 N-channel - Enhancement mode AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPD50N08S4-13 PG-TO252-3-313 4N0813 Maximum ratings, ... See More ⇒
8.3. Size:162K infineon
ipd50n06s4l-08 ipd50n06s4l-08 ds 10.pdf 
IPD50N06S4L-08 OptiMOS -T2 Power-Transistor Product Summary V 60 V DS R 7.8 m DS(on),max I 50 A D Features PG-TO252-3-11 N-channel - Enhancement mode AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPD50N06S4L-08 PG-TO252-3-11 4N06L08 Maximum ra... See More ⇒
8.4. Size:150K infineon
ipd50n03s2-07.pdf 
IPD50N03S2-07 OptiMOS Power-Transistor Product Summary Features V 30 V DS N-channel - Enhancement mode R 7.3 m DS(on),max Automotive AEC Q101 qualified I 50 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO252-3-11 Green package (lead free) Ultra low Rds(on) 100% Avalanche tested Type Package Marking IPD50N03S2-07 PG-TO252-... See More ⇒
8.5. Size:151K infineon
ipd50n03s2l-06.pdf 
IPD50N03S2L-06 OptiMOS Power-Transistor Product Summary Features V 30 V DS N-channel Logic Level - Enhancement mode R 6.4 m DS(on),max Automotive AEC Q101 qualified I 50 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO252-3-11 Green package (lead free) Ultra low Rds(on) 100% Avalanche tested Type Package Marking IPD50N03S2... See More ⇒
8.6. Size:153K infineon
ipd50n04s4l-08 ipd50n04s4l-08 ds 1 0.pdf 
IPD50N04S4L-08 OptiMOS -T2 Power-Transistor Product Summary V 40 V DS R 7.3 m DS(on),max I 50 A D Features N-channel - Enhancement mode PG-TO252-3-313 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPD50N04S4-08 PG-TO252-3-313 4N04L08 Maximum rating... See More ⇒
8.7. Size:153K infineon
ipd50n04s4-10 ipd50n04s4-10 ds 1 0.pdf 
IPD50N04S4-10 OptiMOS -T2 Power-Transistor Product Summary V 40 V DS R 9.3 m DS(on),max I 50 A D Features N-channel - Enhancement mode PG-TO252-3-313 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPD50N04S4-10 PG-TO252-3-313 4N0410 Maximum ratings,... See More ⇒
8.8. Size:148K infineon
ipd50n06s2l-13.pdf 
IPD50N06S2L-13 OptiMOS Power-Transistor Product Summary Features V 55 V DS N-channel Logic Level - Enhancement mode R (SMD version) 12.7 m DS(on),max Automotive AEC Q101 qualified I 50 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO252-3-11 Green package (lead free) Ultra low Rds(on) 100% Avalanche tested Type Package Mark... See More ⇒
8.9. Size:154K infineon
ipd50n04s4-08 ds 1 0.pdf 
IPD50N04S4-08 OptiMOS -T2 Power-Transistor Product Summary V 40 V DS R 7.9 m DS(on),max I 50 A D Features N-channel - Enhancement mode PG-TO252-3-313 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPD50N04S4-08 PG-TO252-3-313 4N0408 Maximum ratings,... See More ⇒
8.10. Size:184K infineon
ipd50n04s3-08 ipd50n04s3-08 ds 1 0.pdf 
IPD50N04S3-08 OptiMOS -T Power-Transistor Product Summary V 40 V DS R 7.5 m DS(on),max I 50 A D Features N-channel - Enhancement mode PG-TO252-3-11 Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green package (RoHS compliant) 100% Avalanche tested Type Package Marking IPD50N04S3-08 PG-TO252-3-11 3N0408 Max... See More ⇒
8.11. Size:149K infineon
ipd50n06s2-14 ipd50n06s2-14 ds 1 1.pdf 
IPD50N06S2-14 Power-Transistor Product Summary Features V 55 V DS N-channel - Enhancement mode R (SMD version) 14.4 m DS(on),max Automotive AEC Q101 qualified I 50 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO252-3-11 Green package (lead free) Ultra low Rds(on) 100% Avalanche tested Type Package Marking IPD50N06S2-14... See More ⇒
8.12. Size:132K infineon
ipd50n03s4l-06 ipd50n03s4l-06 ds 1 1.pdf 
IPD50N03S4L-06 OptiMOS -T2 Power-Transistor Product Summary V 30 V DS R 5.5 mW DS(on),max I 50 A D PG-TO252-3-11 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) 100% Avalanche tested Type Package Marking IPD50N03S4L-06 PG-TO252-3-11 4N03L06 Maximum rat... See More ⇒
8.13. Size:164K infineon
ipd50n06s4-09 ipd50n06s4-09 ds 12.pdf 
IPD50N06S4-09 OptiMOS -T2 Power-Transistor Product Summary V 60 V DS R 9.0 m DS(on),max I 50 A D Features PG-TO252-3-11 N-channel - Enhancement mode AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPD50N06S4-09 PG-TO252-3-11 4N0609 Maximum ratings, a... See More ⇒
8.14. Size:182K infineon
ipd50n04s3-09 ipd50n04s3-09 ds 1 1.pdf 
IPD50N04S3-09 OptiMOS -T Power-Transistor Product Summary V 40 V DS R 9 m DS(on),max I 50 A D Features N-channel - Enhancement mode PG-TO252-3-11 Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green package (RoHS compliant) 100% Avalanche tested Type Package Marking IPD50N04S3-09 PG-TO252-3-11 3N0409 Maxim... See More ⇒
8.15. Size:163K infineon
ipd50n06s4l-12 ipd50n06s4l-12 ds 10.pdf 
IPD50N06S4L-12 OptiMOS -T2 Power-Transistor Product Summary V 60 V DS R 12 m DS(on),max I 50 A D Features PG-TO252-3-11 N-channel - Enhancement mode AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPD50N06S4L-12 PG-TO252-3-11 4N06L12 Maximum rat... See More ⇒
8.16. Size:824K cn vbsemi
ipd50n06s2-14.pdf 
IPD50N06S2-14 www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY 175 C Junction Temperature VDS (V) RDS(on) ( ) ID (A)a TrenchFET Power MOSFET 0.012 at VGS = 10 V 50 Material categorization 60 0.013 at VGS = 4.5 V 45 D TO-252 G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) Parameter Symbol Li... See More ⇒
Detailed specifications: IPD100N04S4L-02, IPD25DP06LM, IPD25DP06NM, IPD30N12S3L-31, IPD35N12S3L-24, IPD380P06NM, IPD40DP06NM, IPD50N08S4-13, IRFP450, IPD50P04P4-13, IPD60N10S4-12, IPD60N10S4L-12, IPD60R145CFD7, IPD60R180P7, IPD60R1K0PFD7S, IPD60R1K5PFD7S, IPD60R210CFD7
Keywords - IPD50N12S3L-15 MOSFET specs
IPD50N12S3L-15 cross reference
IPD50N12S3L-15 equivalent finder
IPD50N12S3L-15 pdf lookup
IPD50N12S3L-15 substitution
IPD50N12S3L-15 replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.