IPD60R2K0PFD7S Specs and Replacement
Type Designator: IPD60R2K0PFD7S
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 20 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 7.2 nS
Cossⓘ - Output Capacitance: 3 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
Package: TO252
IPD60R2K0PFD7S substitution
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IPD60R2K0PFD7S datasheet
ipd60r2k0pfd7s.pdf
IPD60R2K0PFD7S MOSFET DPAK 600V CoolMOS PFD7 SJ Power Device CoolMOS is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS PFD7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, motor d... See More ⇒
ipd60r2k0c6.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V 600V CoolMOS C6 Power Transistor lPD60R2KOC6 Data Sheet Rev. 2.1 Final Industrial & Multimarket + ... See More ⇒
ipd60r2k0c6.pdf
isc N-Channel MOSFET Transistor IPD60R2K0C6,IIPD60R2K0C6 FEATURES Static drain-source on-resistance RDS(on) 2 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V DSS V G... See More ⇒
Detailed specifications: IPD60N10S4L-12, IPD60R145CFD7, IPD60R180P7, IPD60R1K0PFD7S, IPD60R1K5PFD7S, IPD60R210CFD7, IPD60R210PFD7S, IPD60R280PFD7S, SI2302, IPD60R360CFD7, IPD60R600PFD7S, IPD650P06NM, IPD70N12S3-11, IPD70N12S3L-12, IPD70P04P4L-08, IPD70R1K4P7S, IPD70R360P7S
Keywords - IPD60R2K0PFD7S MOSFET specs
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IPD60R2K0PFD7S replacement
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