IPD60R2K0PFD7S MOSFET. Datasheet pdf. Equivalent
Type Designator: IPD60R2K0PFD7S
Marking Code: 60S2K0D7
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 20 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 3 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 3.8 nC
trⓘ - Rise Time: 7.2 nS
Cossⓘ - Output Capacitance: 3 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
Package: TO252
IPD60R2K0PFD7S Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IPD60R2K0PFD7S Datasheet (PDF)
ipd60r2k0pfd7s.pdf
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ipd60r2k0c6.pdf
isc N-Channel MOSFET Transistor IPD60R2K0C6,IIPD60R2K0C6FEATURESStatic drain-source on-resistance:RDS(on)2Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 600 VDSSV G
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