All MOSFET. IPD70N12S3L-12 Datasheet

 

IPD70N12S3L-12 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IPD70N12S3L-12
   Marking Code: QN12L12
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 125 W
   Maximum Drain-Source Voltage |Vds|: 120 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 2.4 V
   Maximum Drain Current |Id|: 70 A
   Maximum Junction Temperature (Tj): 175 °C
   Total Gate Charge (Qg): 59 nC
   Rise Time (tr): 6 nS
   Drain-Source Capacitance (Cd): 950 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.0115 Ohm
   Package: TO252

 IPD70N12S3L-12 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPD70N12S3L-12 Datasheet (PDF)

 ..1. Size:394K  infineon
ipd70n12s3l-12.pdf

IPD70N12S3L-12
IPD70N12S3L-12

IPD70N12S3L-12OptiMOS-T Power-TransistorProduct Summary VDS 120 V RDS(on),max 11.5 mW ID 70 A Features OptiMOS - power MOSFET for automotive applicationsPG-TO252-3-11 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Avalanche testedT

 4.1. Size:361K  infineon
ipd70n12s3-11.pdf

IPD70N12S3L-12
IPD70N12S3L-12

IPD70N12S3-11OptiMOS-T Power-TransistorProduct Summary VDS 120 V RDS(on),max 11.1 mW ID 70 A Features OptiMOS - power MOSFET for automotive applicationsPG-TO252-3-11 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Avalanche testedTy

 7.1. Size:176K  infineon
ipd70n10s3l-12 ipd70n10s3l-12 ds 1 1.pdf

IPD70N12S3L-12
IPD70N12S3L-12

IPD70N10S3L-12OptiMOS-T Power-TransistorProduct SummaryV 100 VDSR 11.5mWDS(on),maxI 70 ADFeatures N-channel - Enhancement modePG-TO252-3-11 Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Avalanche testedType Package MarkingIPD70N10S3L-12 PG-TO252-3-11 QN10L12

 7.2. Size:175K  infineon
ipd70n10s3-12 ipd70n10s3-12 ds 1 1.pdf

IPD70N12S3L-12
IPD70N12S3L-12

IPD70N10S3-12OptiMOS-T Power-TransistorProduct SummaryV 100 VDSR 11.1mWDS(on),maxI 70 ADFeatures N-channel - Enhancement modePG-TO252-3-11 Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Avalanche testedType Package MarkingIPD70N10S3-12 PG-TO252-3-11 QN1012Max

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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