All MOSFET. IPG16N10S4L-61A Datasheet

 

IPG16N10S4L-61A MOSFET. Datasheet pdf. Equivalent


   Type Designator: IPG16N10S4L-61A
   Marking Code: 4N10L61
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 29 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.1 V
   |Id|ⓘ - Maximum Drain Current: 16 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 8.5 nC
   trⓘ - Rise Time: 1 nS
   Cossⓘ - Output Capacitance: 165 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.061 Ohm
   Package: TDSON-8-10

 IPG16N10S4L-61A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPG16N10S4L-61A Datasheet (PDF)

 0.1. Size:269K  infineon
 ipg16n10s4l-61a.pdf

IPG16N10S4L-61A IPG16N10S4L-61A

IPG16N10S4L-61AOptiMOS-T2 Power-TransistorProduct SummaryVDS 100 VRDS(on),max3) 61mWID 16 AFeatures Dual N-channel Logic Level - Enhancement modePG-TDSON-8-10 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Feasible for automatic optical inspection (AOI)Type

 4.1. Size:195K  infineon
 ipg16n10s4-61a.pdf

IPG16N10S4L-61A IPG16N10S4L-61A

IPG16N10S4-61AOptiMOS-T2 Power-TransistorProduct SummaryVDS 100 VRDS(on),max3) 61mID 16 AFeatures Dual N-channel Normal Level - Enhancement modePG-TDSON-8-10 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Feasible for automatic optical inspection (AOI)Typ

Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , SKD502T , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .

History: SSPS922NE

 

 
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