All MOSFET. STD3N30L-1 Datasheet

 

STD3N30L-1 MOSFET. Datasheet pdf. Equivalent

Type Designator: STD3N30L-1

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 50 W

Maximum Drain-Source Voltage |Vds|: 300 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 3 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 16 nC

Drain-Source Capacitance (Cd): 800 pF

Maximum Drain-Source On-State Resistance (Rds): 1.4 Ohm

Package: IPAK

STD3N30L-1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STD3N30L-1 Datasheet (PDF)

7.1. std3n30.pdf Size:143K _st

STD3N30L-1
STD3N30L-1

STD3N30 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V R I DSS DS(on) D STD3N30 300 V < 1.4 Ω 3 A TYPICAL R = 1.1 Ω DS(on) AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC 3 APPLICATION ORIENTED 3 2 CHARACTERIZATION 1 1 THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX ”-1”) SURFACE-MOUNTING DPAK (TO-252) I

9.1. stf3nk100z stp3nk100z std3nk100z.pdf Size:424K _st

STD3N30L-1
STD3N30L-1

STF3NK100Z - STD3NK100Z STP3NK100Z N-channel 1000V - 5.4Ω - 2.5A - TO-220 - TO-220FP - DPAK Zener-protected SuperMESH™ Power MOSFET Features RDS(on) VDSS ID PTOT Type Max STF3NK100Z 1000V < 6Ω 2.5A 25W 3 3 2 2 1 1 STP3NK100Z 1000V < 6Ω 2.5A 90W TO-220 TO-220FP STD3NK100Z 1000V < 6Ω 2.5A 90W ■ Extremely high dv/dt capability 3 1 ■ 100% avalanche tested DPAK

9.2. stp3nk60z-fp stb3nk60z std3nk60z std3nk60z-1.pdf Size:757K _st

STD3N30L-1
STD3N30L-1

STP3NK60Z - STP3NK60ZFP STB3NK60Z-STD3NK60Z-STD3NK60Z-1 N-CHANNEL 600V - 3.3Ω - 2.4A TO-220/FP/D2PAK/DPAK/IPAK Zener-Protected SuperMESH™Power MOSFET TYPE VDSS RDS(on) ID Pw STP3NK60Z 600 V < 3.6 Ω 2.4 A 45 W STP3NK60ZFP 600 V < 3.6 Ω 2.4 A 20 W STB3NK60Z 600 V < 3.6 Ω 2.4 A 45 W STD3NK60Z 600 V < 3.6 Ω 2.4 A 45 W 3 STD3NK60Z-1 600 V < 3.6 Ω 2.4 A 45 W 2 1 TYPICAL RD

 9.3. std3nk60zd.pdf Size:348K _st

STD3N30L-1
STD3N30L-1

STD3NK60ZD N-channel 600 V, 3.3 Ω, 2.4 A, DPAK SuperFREDMesh™ Power MOSFET Features RDS(on) Type VDSS ID max STD3NK60ZD 600 V < 3.6Ω 2.4 A ■ 100% avalanche tested 3 ■ Extremely high dv/dt capability 1 ■ Gate charge minimized DPAK ■ Very low intrinsic capacitances ■ Fast internal recovery diode Application ■ Switching applications Figure 1. Internal schematic

9.4. std3nk90zt4 stp3nk90zfp.pdf Size:438K _st

STD3N30L-1
STD3N30L-1

STP3NK90Z - STP3NK90ZFP STD3NK90Z - STD3NK90Z-1 N-CHANNEL 900V - 4.1Ω - 3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH™Power MOSFET TYPE VDSS RDS(on) ID Pw STP3NK90Z 900 V < 4.8 Ω 3 A 90 W STP3NK90ZFP 900 V < 4.8 Ω 3 A 25 W STD3NK90Z 900 V < 4.8 Ω 3 A 90 W STD3NK90Z-1 900 V < 4.8 Ω 3 A 90 W 3 TYPICAL RDS(on) = 4.1 Ω 2 1 EXTREMELY HIGH dv/dt CAPABILITY TO-22

 9.5. stp3nk90z stp3nk90zfp std3nk90z std3nk90z-1.pdf Size:613K _st

STD3N30L-1
STD3N30L-1

STP3NK90Z - STP3NK90ZFP STD3NK90Z - STD3NK90Z-1 N-CHANNEL 900V - 4.1Ω - 3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH™Power MOSFET TYPE VDSS RDS(on) ID Pw STP3NK90Z 900 V < 4.8 Ω 3 A 90 W STP3NK90ZFP 900 V < 4.8 Ω 3 A 25 W STD3NK90Z 900 V < 4.8 Ω 3 A 90 W STD3NK90Z-1 900 V < 4.8 Ω 3 A 90 W 3 TYPICAL RDS(on) = 4.1 Ω 2 1 EXTREMELY HIGH dv/dt CAPABILITY TO-22

9.6. std3n80k5 stf3n80k5 stp3n80k5 stu3n80k5.pdf Size:1589K _st

STD3N30L-1
STD3N30L-1

STD3N80K5, STF3N80K5, STP3N80K5, STU3N80K5 N-channel 800 V, 2.8 Ω typ., 2.5 A Zener-protected SuperMESH™ 5 Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packages Datasheet - production data Features TAB Order codes VDS RDS(on)max ID PTOT 3 1 STD3N80K5 60 W DPAK STF3N80K5 20 W 3 800 V 3.5 Ω 2.5 A 2 1 TAB STP3N80K5 60 W TO-220FP STU3N80K5 TAB • TO-220 worldwide bes

9.7. stb3n62k3 std3n62k3 stf3n62k3 stp3n62k3 stu3n62k3.pdf Size:548K _st

STD3N30L-1
STD3N30L-1

STB3N62K3, STD3N62K3, STF3N62K3 STP3N62K3, STU3N62K3 N-channel 620 V, 2.2 Ω , 2.7 A SuperMESH3™ Power MOSFET D2PAK, DPAK, TO-220FP, TO-220, IPAK Features RDS(on) 3 3 Type VDSS ID PD 2 1 max 1 DPAK STB3N62K3 620 V < 2.5 Ω 2.7 A 45 W IPAK STD3N62K3 620 V < 2.5 Ω 2.7 A 45 W STF3N62K3 620 V < 2.5 Ω 2.7 A(1) 20 W 3 1 STP3N62K3 620 V < 2.5 Ω 2.7 A 45 W D²PAK STU3N62K3

9.8. std3nm60 std3nm60-1 stp4nm60.pdf Size:705K _st

STD3N30L-1
STD3N30L-1

STP4NM60 STD3NM60, STD3NM60-1 N-channel 600 V, 1.3 Ω, 3 A TO-220, DPAK, IPAK Zener-protected MDmesh™ Power MOSFET Features VDSS RDS(on) Type ID PW (@Tjmax) max 3 1 STD3NM60 3 2 3 A 42 W DPAK 1 STD3NM60-1 650 < 1.5 Ω TO-220 STP4NM60 4 A 69 W 3 2 1 ■ High dv/dt and avalanche capabilities IPAK ■ Improved ESD capability ■ Low input capacitance and gate charge

9.9. std3n25.pdf Size:172K _st

STD3N30L-1
STD3N30L-1

STD3N25 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V R I DSS DS(on) D STD3N25 250 V < 2 Ω 3 A TYPICAL RDS(on) = 1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC 3 APPLICATION ORIENTED 3 2 CHARACTERIZATION 1 1 THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX ”-1”) SURFACE-MOUNTING DPAK (TO-252) IPAK DP

9.10. std3nk50z std3nk50z-1 stq3nk50zr-ap.pdf Size:481K _st

STD3N30L-1
STD3N30L-1

STQ3NK50ZR-AP STD3NK50Z - STD3NK50Z-1 N-CHANNEL 500V - 2.8Ω - 2.3A TO-92/DPAK/IPAK Zener-Protected SuperMESH™ MOSFET Table 1: General Features Figure 1: Package TYPE VDSS RDS(on) ID Pw STQ3NK50ZR-AP 500 V 3.3 Ω 0.5 A 3 W STD3NK50Z 500 V 3.3 Ω 2.3 A 45 W STD3NK50Z-1 500 V 3.3 Ω 2.3 A 45 W 3 TYPICAL RDS(on) = 2.8Ω 1 EXTREMELY HIGH dv/dt CAPABILITY DPAK TO-92 (Ammopak)

9.11. std3nm60t4.pdf Size:711K _st

STD3N30L-1
STD3N30L-1

STP4NM60 STD3NM60, STD3NM60-1 N-channel 600 V, 1.3 Ω, 3 A TO-220, DPAK, IPAK Zener-protected MDmesh™ Power MOSFET Features VDSS RDS(on) Type ID PW (@Tjmax) max 3 1 STD3NM60 3 2 3 A 42 W DPAK 1 STD3NM60-1 650 < 1.5 Ω TO-220 STP4NM60 4 A 69 W 3 2 1 ■ High dv/dt and avalanche capabilities IPAK ■ Improved ESD capability ■ Low input capacitance and gate charge

9.12. std3n40k3.pdf Size:973K _st

STD3N30L-1
STD3N30L-1

STD3N40K3 N-channel 400 V, 2.7 Ω typ., 2 A SuperMESH3™ Zener-protected Power MOSFET in a DPAK package Datasheet — production data Features Order code VDSS RDS(on) max ID Pw STD3N40K3 400 V < 3.4 Ω 2 A 30 W TAB ■ 100% avalanche tested 3 ■ Extremely high dv/dt capability 1 ■ Gate charge minimized DPAK ■ Very low intrinsic capacitance ■ Improved diode reverse recove

9.13. stb3nk60zt4 std3nk60zt4.pdf Size:551K _st

STD3N30L-1
STD3N30L-1

STP3NK60Z - STP3NK60ZFP STB3NK60Z-STD3NK60Z-STD3NK60Z-1 N-CHANNEL 600V - 3.3Ω - 2.4A TO-220/FP/D2PAK/DPAK/IPAK Zener-Protected SuperMESH™Power MOSFET TYPE VDSS RDS(on) ID Pw STP3NK60Z 600 V < 3.6 Ω 2.4 A 45 W STP3NK60ZFP 600 V < 3.6 Ω 2.4 A 20 W STB3NK60Z 600 V < 3.6 Ω 2.4 A 45 W STD3NK60Z 600 V < 3.6 Ω 2.4 A 45 W 3 STD3NK60Z-1 600 V < 3.6 Ω 2.4 A 45 W 2 1 TYPICAL RD

9.14. std3nm60n.pdf Size:903K _st

STD3N30L-1
STD3N30L-1

STD3NM60N N-channel 600 V, 1.6 Ω, 3.3 A, MDmesh™ II Power MOSFET in DPAK package Datasheet — preliminary data Features VDSS RDS(on) Order codes ID @TJmax max. STD3NM60N 650 V < 1.8 Ω 3.3 A TAB 3 ■ 100% avalanche tested 1 ■ Low input capacitance and gate charge DPAK ■ Low gate input resistance Applications ■ Switching applications Description Figure 1. Internal

9.15. std3nm50 std3nm50t4.pdf Size:280K _st

STD3N30L-1
STD3N30L-1

STD3NM50 STD3NM50-1 N-CHANNEL 550V @ Tjmax- 2.5Ω - 3A DPAK/IPAK Zener-Protected MDmesh™ MOSFET TYPE VDSS RDS(on) ID (@Tjmax) STD3NM50 550V < 3 Ω 3A STD3NM50-1 550V < 3 Ω 3A TYPICAL RDS(on) = 2.5 Ω 3 3 2 HIGH dv/dt AND AVALANCHE CAPABILITIES 1 1 IMPROVED ESD CAPABILITY LOW INPUT CAPACITANCE AND GATE CHARGE DPAK IPAK TO-252 LOW GATE INPUT RESISTANCE TO-251 TIG

9.16. std3nk50z-1 std3nk50zt4 stq3nk50zr-ap.pdf Size:472K _st

STD3N30L-1
STD3N30L-1

STQ3NK50ZR-AP STD3NK50Z - STD3NK50Z-1 N-CHANNEL 500V - 2.8Ω - 2.3A TO-92/DPAK/IPAK Zener-Protected SuperMESH™ MOSFET Table 1: General Features Figure 1: Package TYPE VDSS RDS(on) ID Pw STQ3NK50ZR-AP 500 V 3.3 Ω 0.5 A 3 W STD3NK50Z 500 V 3.3 Ω 2.3 A 45 W STD3NK50Z-1 500 V 3.3 Ω 2.3 A 45 W 3 TYPICAL RDS(on) = 2.8Ω 1 EXTREMELY HIGH dv/dt CAPABILITY DPAK TO-92 (Ammopak)

9.17. std3nb50.pdf Size:75K _st

STD3N30L-1
STD3N30L-1

STD3NB50 N - CHANNEL 500V - 2.5Ω - 3A - IPAK/DPAK PowerMESH MOSFET PRELIMINARY DATA TYPE V R I DSS DS(on) D STD3NB50 500 V < 2.8 Ω 3 A TYPICAL R = 2.5 Ω DS(on) EXTREMELY HIGH dv/dt CAPABILITY 3 2 100% AVALANCHE TESTED 3 1 VERY LOW INTRINSIC CAPACITANCES 1 GATE CHARGE MINIMIZED IPAK DPAK TO-251 TO-252 DESCRIPTION (Suffix "-1") (Suffix "T4") Using the latest hi

9.18. std3nk80z std3nk80z-1 stf3nk80z stp3nk80z.pdf Size:882K _st

STD3N30L-1
STD3N30L-1

STD3NK80Z, STD3NK80Z-1 STF3NK80Z, STP3NK80Z N-channel 800 V, 3.8 Ω, 2.5 A, TO-220, TO-220FP, DPAK, IPAK Zener-protected SuperMESH™ Power MOSFET Features VDSS Type RDS(on) ID (@Tjmax) STP3NK80Z 800 V < 4.5 Ω 2.5 A 3 2 1 STF3NK80Z 800 V < 4.5 Ω 2.5 A TO-220FP TO-220 STD3NK80Z 800 V < 4.5 Ω 2.5 A STD3NK80Z-1 800 V < 4.5 Ω 2.5 A ■ Extremely high dv/dt capability 3

9.19. std3n.pdf Size:170K _st

STD3N30L-1
STD3N30L-1

STD3N30L N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V R I DSS DS(on) D STD3N30L 300 V < 1.4 Ω 3 A TYPICAL R = 1.15 Ω DS(on) AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC 3 APPLICATION ORIENTED 3 2 CHARACTERIZATION 1 1 THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX ”-1”) SURFACE-MOUNTING DPAK (TO-252)

9.20. std3na50.pdf Size:172K _st

STD3N30L-1
STD3N30L-1

STD3NA50 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V R I DSS DS(on) D STD3NA50 500 V < 3 Ω 2.7 A TYPICAL R = 2.4 Ω DS(on) AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC 3 APPLICATION ORIENTED 3 2 CHARACTERIZATION 1 1 THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX ”-1”) SURFACE-MOUNTING DPAK (TO-252)

9.21. std3nb50-1.pdf Size:99K _st

STD3N30L-1
STD3N30L-1

STD3NB50 STD3NB50-1 N - CHANNEL 500V - 2.5Ω - 3A - IPAK/DPAK PowerMESH™ MOSFET PRELIMINARY DATA Table 1. General Features Figure 1. Package Type VDSS RDS(on) ID STD3NB50 500 V < 2.8 Ω 3 A STD3NB50-1 500 V < 2.8 Ω 3 A FEATURES SUMMARY ■ TYPICAL RDS(on) = 2.5 Ω 3 3 ■ EXTREMELY HIGH dv/dt CAPABILITY 2 1 1 ■ 100% AVALANCHE TESTED ■ VERY LOW INTRINSIC CAPACITANCE

9.22. std3nk80zt4.pdf Size:880K _st

STD3N30L-1
STD3N30L-1

STD3NK80Z, STD3NK80Z-1 STF3NK80Z, STP3NK80Z N-channel 800 V, 3.8 Ω, 2.5 A, TO-220, TO-220FP, DPAK, IPAK Zener-protected SuperMESH™ Power MOSFET Features VDSS Type RDS(on) ID (@Tjmax) STP3NK80Z 800 V < 4.5 Ω 2.5 A 3 2 1 STF3NK80Z 800 V < 4.5 Ω 2.5 A TO-220FP TO-220 STD3NK80Z 800 V < 4.5 Ω 2.5 A STD3NK80Z-1 800 V < 4.5 Ω 2.5 A ■ Extremely high dv/dt capability 3

Datasheet: STD2N50-1 , STD2N50T4 , STD2NA60-1 , STD2NA60T4 , STD3N25-1 , STD3N25T4 , STD3N30-1 , STD3N30L , IRF740 , STD3N30LT4 , STD3N30T4 , STD3NA50-1 , STD3NA50T4 , STD4N25-1 , STD4N25T4 , STD4NA40-1 , STD4NA40T4 .

 

 
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