All MOSFET. IPI120N08S4-04 Datasheet

 

IPI120N08S4-04 Datasheet and Replacement


   Type Designator: IPI120N08S4-04
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 179 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 120 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 1870 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0041 Ohm
   Package: TO262
 

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IPI120N08S4-04 Datasheet (PDF)

 ..1. Size:211K  infineon
 ipb120n08s4-04 ipi120n08s4-04 ipp120n08s4-04.pdf pdf_icon

IPI120N08S4-04

IPB120N08S4-04IPI120N08S4-04, IPP120N08S4-04OptiMOS-T2 Power-TransistorProduct SummaryV 80 VDSR (SMD version) 4.1mWDS(on),maxI 120 ADFeatures N-channel - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested

 1.1. Size:225K  infineon
 ipb120n08s4-03 ipi120n08s4-03 ipp120n08s4-03.pdf pdf_icon

IPI120N08S4-04

IPB120N08S4-03IPI120N08S4-03, IPP120N08S4-03OptiMOS-T2 Power-TransistorProduct SummaryV 80 VDSR (SMD version) 2.5mWDS(on),maxI 120 ADFeatures N-channel - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested

 6.1. Size:170K  infineon
 ipb120n06s4-03 ipi120n06s4-03 ipp120n06s4-03 ipp120n06s4 ipb120n06s4 ipi120n06s4-03.pdf pdf_icon

IPI120N08S4-04

IPB120N06S4-03IPI120N06S4-03, IPP120N06S4-03OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR (SMD version) 2.8mDS(on),max I 120 ADFeatures N-channel - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche teste

 6.2. Size:159K  infineon
 ipb120n04s4-02 ipi120n04s4-02 ipp120n04s4-02.pdf pdf_icon

IPI120N08S4-04

IPB120N04S4-02IPI120N04S4-02, IPP120N04S4-02OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR (SMD version) 1.8mDS(on),max I 120 ADFeaturesPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedTy

SHOW MORE

Datasheet: IPG20N06S4L-26A , IPG20N10S4-36A , IPG20N10S4L-22 , IPG20N10S4L-22A , IPG20N10S4L-35A , IPI08CN10NG , IPI100N12S3-05 , IPI120N08S4-03 , IRFB4110 , IPI120N10S4-03 , IPI120N10S4-05 , IPI120P04P4-04 , IPI120P04P4L-03 , IPI16CN10NG , IPI50N12S3L-15 , IPI70N12S3-11 , IPI80N08S4-06 .

History: UPA2592T1H | FDMA86265P

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