IPI120N08S4-04. Аналоги и основные параметры
Наименование производителя: IPI120N08S4-04
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 179 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 80 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 120 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
tr ⓘ - Время нарастания: 10 ns
Cossⓘ - Выходная емкость: 1870 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0041 Ohm
Тип корпуса: TO262
Аналог (замена) для IPI120N08S4-04
- подборⓘ MOSFET транзистора по параметрам
IPI120N08S4-04 даташит
ipb120n08s4-04 ipi120n08s4-04 ipp120n08s4-04.pdf
IPB120N08S4-04 IPI120N08S4-04, IPP120N08S4-04 OptiMOS -T2 Power-Transistor Product Summary V 80 V DS R (SMD version) 4.1 mW DS(on),max I 120 A D Features N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested
ipb120n08s4-03 ipi120n08s4-03 ipp120n08s4-03.pdf
IPB120N08S4-03 IPI120N08S4-03, IPP120N08S4-03 OptiMOS -T2 Power-Transistor Product Summary V 80 V DS R (SMD version) 2.5 mW DS(on),max I 120 A D Features N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested
ipb120n06s4-03 ipi120n06s4-03 ipp120n06s4-03 ipp120n06s4 ipb120n06s4 ipi120n06s4-03.pdf
IPB120N06S4-03 IPI120N06S4-03, IPP120N06S4-03 OptiMOS -T2 Power-Transistor Product Summary V 60 V DS R (SMD version) 2.8 m DS(on),max I 120 A D Features N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche teste
ipb120n04s4-02 ipi120n04s4-02 ipp120n04s4-02.pdf
IPB120N04S4-02 IPI120N04S4-02, IPP120N04S4-02 OptiMOS -T2 Power-Transistor Product Summary V 40 V DS R (SMD version) 1.8 m DS(on),max I 120 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Ty
Другие IGBT... IPG20N06S4L-26A, IPG20N10S4-36A, IPG20N10S4L-22, IPG20N10S4L-22A, IPG20N10S4L-35A, IPI08CN10NG, IPI100N12S3-05, IPI120N08S4-03, AON6414A, IPI120N10S4-03, IPI120N10S4-05, IPI120P04P4-04, IPI120P04P4L-03, IPI16CN10NG, IPI50N12S3L-15, IPI70N12S3-11, IPI80N08S4-06
History: STSJ50NH3LL | SIF80N060 | IRFS630A | IRFS710A | IPD25CN10NG
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