IPL60R065C7 Datasheet. Specs and Replacement

Type Designator: IPL60R065C7  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 180 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 29 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 54 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm

Package: VSON-4

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IPL60R065C7 datasheet

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Detailed specifications: IPI50N12S3L-15, IPI70N12S3-11, IPI80N08S4-06, IPI80P03P4-05, IPI80P04P4-07, IPI80P04P4L-04, IPI80P04P4L-08, IPL60R060CFD7, IRFP064N, IPL60R075CFD7, IPL60R085P7, IPL60R095CFD7, IPL60R125P7, IPL60R160CFD7, IPL60R185C7, IPL60R185P7, IPL60R225CFD7

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