IPN60R600PFD7S Datasheet. Specs and Replacement

Type Designator: IPN60R600PFD7S

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 8 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm

Package: SOT223

IPN60R600PFD7S substitution

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IPN60R600PFD7S datasheet

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IPN60R600PFD7S

IPN60R600PFD7S MOSFET PG-SOT223 600V CoolMOS PFD7 SJ Power Device CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS PFD7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, motor d... See More ⇒

 4.1. Size:1223K  infineon
 ipn60r600p7s.pdf pdf_icon

IPN60R600PFD7S

IPN60R600P7S MOSFET PG-SOT223 600V CoolMOS P7 Power Transistor The CoolMOS 7th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ MOSF... See More ⇒

 8.1. Size:713K  infineon
 ipn60r2k0pfd7s.pdf pdf_icon

IPN60R600PFD7S

IPN60R2K0PFD7S MOSFET PG-SOT223 600V CoolMOS PFD7 SJ Power Device CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS PFD7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, motor d... See More ⇒

 8.2. Size:1230K  infineon
 ipn60r360p7s.pdf pdf_icon

IPN60R600PFD7S

IPN60R360P7S MOSFET PG-SOT223 600V CoolMOS P7 Power Transistor The CoolMOS 7th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ MOSF... See More ⇒

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Detailed specifications: IPN50R800CE, IPN60R1K0PFD7S, IPN60R1K5CE, IPN60R2K0PFD7S, IPN60R360P7S, IPN60R360PFD7S, IPN60R3K4CE, IPN60R600P7S, AO4407, IPN65R1K5CE, IPN70R1K0CE, IPN70R1K2P7S, IPN70R1K4P7S, IPN70R1K5CE, IPN70R2K0P7S, IPN70R2K1CE, IPN70R360P7S

Keywords - IPN60R600PFD7S MOSFET specs

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