IPN60R600PFD7S. Аналоги и основные параметры
Наименование производителя: IPN60R600PFD7S
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 7 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 6 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 10 ns
Cossⓘ - Выходная емкость: 8 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.6 Ohm
Тип корпуса: SOT223
Аналог (замена) для IPN60R600PFD7S
- подборⓘ MOSFET транзистора по параметрам
IPN60R600PFD7S даташит
ipn60r600pfd7s.pdf
IPN60R600PFD7S MOSFET PG-SOT223 600V CoolMOS PFD7 SJ Power Device CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS PFD7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, motor d
ipn60r600p7s.pdf
IPN60R600P7S MOSFET PG-SOT223 600V CoolMOS P7 Power Transistor The CoolMOS 7th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ MOSF
ipn60r2k0pfd7s.pdf
IPN60R2K0PFD7S MOSFET PG-SOT223 600V CoolMOS PFD7 SJ Power Device CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS PFD7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, motor d
ipn60r360p7s.pdf
IPN60R360P7S MOSFET PG-SOT223 600V CoolMOS P7 Power Transistor The CoolMOS 7th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ MOSF
Другие IGBT... IPN50R800CE, IPN60R1K0PFD7S, IPN60R1K5CE, IPN60R2K0PFD7S, IPN60R360P7S, IPN60R360PFD7S, IPN60R3K4CE, IPN60R600P7S, AO4407, IPN65R1K5CE, IPN70R1K0CE, IPN70R1K2P7S, IPN70R1K4P7S, IPN70R1K5CE, IPN70R2K0P7S, IPN70R2K1CE, IPN70R360P7S
History: IPN60R360PFD7S | IRFS9231 | FDW256P | IPP100N06S3L-03
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Список транзисторов
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