IPN80R2K4P7 Datasheet. Specs and Replacement

Type Designator: IPN80R2K4P7

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 6.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 3.8 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.4 Ohm

Package: SOT223

IPN80R2K4P7 substitution

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IPN80R2K4P7 datasheet

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IPN80R2K4P7

IPN80R2K4P7 MOSFET PG-SOT223 800V CoolMOS P7 Power Transistor The latest 800V CoolMOS P7 series sets a new benchmark in 800V super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon s over 18 years pioneering super junction technology innovation. Features Best-in-class FOM R * E ; reduced Q , C , and C DS(... See More ⇒

 8.1. Size:1023K  infineon
 ipn80r750p7.pdf pdf_icon

IPN80R2K4P7

IPN80R750P7 MOSFET PG-SOT223 800V CoolMOS P7 Power Transistor The latest 800V CoolMOS P7 series sets a new benchmark in 800V super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon s over 18 years pioneering super junction technology innovation. Features Best-in-class FOM R * E ; reduced Q , C , and C DS(... See More ⇒

 8.2. Size:1024K  infineon
 ipn80r600p7.pdf pdf_icon

IPN80R2K4P7

IPN80R600P7 MOSFET PG-SOT223 800V CoolMOS P7 Power Transistor The latest 800V CoolMOS P7 series sets a new benchmark in 800V super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon s over 18 years pioneering super junction technology innovation. Features Best-in-class FOM R * E ; reduced Q , C , and C DS(... See More ⇒

 8.3. Size:1037K  infineon
 ipn80r900p7.pdf pdf_icon

IPN80R2K4P7

IPN80R900P7 MOSFET PG-SOT223 800V CoolMOS P7 Power Transistor The latest 800V CoolMOS P7 series sets a new benchmark in 800V super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon s over 18 years pioneering super junction technology innovation. Features Best-in-class FOM R * E ; reduced Q , C , and C DS(... See More ⇒

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Detailed specifications: IPN70R2K0P7S, IPN70R2K1CE, IPN70R360P7S, IPN70R600P7S, IPN70R750P7S, IPN70R900P7S, IPN80R1K2P7, IPN80R1K4P7, IRF2807, IPN80R4K5P7, IPN80R600P7, IPN80R750P7, IPN80R900P7, IPN95R3K7P7, IPP015N04N6, IPP100N12S3-05, IPP120N08S4-03

Keywords - IPN80R2K4P7 MOSFET specs

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