IPN80R2K4P7 MOSFET. Datasheet pdf. Equivalent
Type Designator: IPN80R2K4P7
Marking Code: 80R2K4
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 6.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
|Id|ⓘ - Maximum Drain Current: 2.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 7.5 nC
trⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 3.8 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.4 Ohm
Package: SOT223
IPN80R2K4P7 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IPN80R2K4P7 Datasheet (PDF)
ipn80r2k4p7.pdf
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ipn80r1k4p7.pdf
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ipn80r1k2p7.pdf
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