All MOSFET. IPN80R2K4P7 Datasheet

 

IPN80R2K4P7 Datasheet and Replacement


   Type Designator: IPN80R2K4P7
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 6.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 3.8 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.4 Ohm
   Package: SOT223
 

 IPN80R2K4P7 substitution

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IPN80R2K4P7 Datasheet (PDF)

 ..1. Size:1038K  infineon
 ipn80r2k4p7.pdf pdf_icon

IPN80R2K4P7

IPN80R2K4P7MOSFETPG-SOT223800V CoolMOS P7 Power TransistorThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features Best-in-class FOM R * E ; reduced Q , C , and CDS(

 8.1. Size:1023K  infineon
 ipn80r750p7.pdf pdf_icon

IPN80R2K4P7

IPN80R750P7MOSFETPG-SOT223800V CoolMOS P7 Power TransistorThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features Best-in-class FOM R * E ; reduced Q , C , and CDS(

 8.2. Size:1024K  infineon
 ipn80r600p7.pdf pdf_icon

IPN80R2K4P7

IPN80R600P7MOSFETPG-SOT223800V CoolMOS P7 Power TransistorThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features Best-in-class FOM R * E ; reduced Q , C , and CDS(

 8.3. Size:1037K  infineon
 ipn80r900p7.pdf pdf_icon

IPN80R2K4P7

IPN80R900P7MOSFETPG-SOT223800V CoolMOS P7 Power TransistorThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features Best-in-class FOM R * E ; reduced Q , C , and CDS(

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Datasheet: IPN70R2K0P7S , IPN70R2K1CE , IPN70R360P7S , IPN70R600P7S , IPN70R750P7S , IPN70R900P7S , IPN80R1K2P7 , IPN80R1K4P7 , IRF2807 , IPN80R4K5P7 , IPN80R600P7 , IPN80R750P7 , IPN80R900P7 , IPN95R3K7P7 , IPP015N04N6 , IPP100N12S3-05 , IPP120N08S4-03 .

History: IPP015N04N6 | IPN80R600P7 | IPN95R3K7P7 | SIHG47N60S

Keywords - IPN80R2K4P7 MOSFET datasheet

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