IPN80R2K4P7 datasheet, аналоги, основные параметры

Наименование производителя: IPN80R2K4P7  📄📄 

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 6.3 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 800 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 2.5 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 10 ns

Cossⓘ - Выходная емкость: 3.8 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 2.4 Ohm

Тип корпуса: SOT223

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Аналог (замена) для IPN80R2K4P7

- подборⓘ MOSFET транзистора по параметрам

 

IPN80R2K4P7 даташит

 ..1. Size:1038K  infineon
 ipn80r2k4p7.pdf pdf_icon

IPN80R2K4P7

IPN80R2K4P7 MOSFET PG-SOT223 800V CoolMOS P7 Power Transistor The latest 800V CoolMOS P7 series sets a new benchmark in 800V super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon s over 18 years pioneering super junction technology innovation. Features Best-in-class FOM R * E ; reduced Q , C , and C DS(

 8.1. Size:1023K  infineon
 ipn80r750p7.pdf pdf_icon

IPN80R2K4P7

IPN80R750P7 MOSFET PG-SOT223 800V CoolMOS P7 Power Transistor The latest 800V CoolMOS P7 series sets a new benchmark in 800V super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon s over 18 years pioneering super junction technology innovation. Features Best-in-class FOM R * E ; reduced Q , C , and C DS(

 8.2. Size:1024K  infineon
 ipn80r600p7.pdf pdf_icon

IPN80R2K4P7

IPN80R600P7 MOSFET PG-SOT223 800V CoolMOS P7 Power Transistor The latest 800V CoolMOS P7 series sets a new benchmark in 800V super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon s over 18 years pioneering super junction technology innovation. Features Best-in-class FOM R * E ; reduced Q , C , and C DS(

 8.3. Size:1037K  infineon
 ipn80r900p7.pdf pdf_icon

IPN80R2K4P7

IPN80R900P7 MOSFET PG-SOT223 800V CoolMOS P7 Power Transistor The latest 800V CoolMOS P7 series sets a new benchmark in 800V super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon s over 18 years pioneering super junction technology innovation. Features Best-in-class FOM R * E ; reduced Q , C , and C DS(

ПОКАЗАТЬ ЕЩЁ

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