IPN80R2K4P7 - описание и поиск аналогов

 

IPN80R2K4P7 - Аналоги. Основные параметры


   Наименование производителя: IPN80R2K4P7
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 6.3 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 800 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 2.5 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 10 ns
   Cossⓘ - Выходная емкость: 3.8 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 2.4 Ohm
   Тип корпуса: SOT223
 

 Аналог (замена) для IPN80R2K4P7

   - подбор ⓘ MOSFET транзистора по параметрам

 

IPN80R2K4P7 технические параметры

 ..1. Size:1038K  infineon
 ipn80r2k4p7.pdf pdf_icon

IPN80R2K4P7

IPN80R2K4P7 MOSFET PG-SOT223 800V CoolMOS P7 Power Transistor The latest 800V CoolMOS P7 series sets a new benchmark in 800V super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon s over 18 years pioneering super junction technology innovation. Features Best-in-class FOM R * E ; reduced Q , C , and C DS(

 8.1. Size:1023K  infineon
 ipn80r750p7.pdf pdf_icon

IPN80R2K4P7

IPN80R750P7 MOSFET PG-SOT223 800V CoolMOS P7 Power Transistor The latest 800V CoolMOS P7 series sets a new benchmark in 800V super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon s over 18 years pioneering super junction technology innovation. Features Best-in-class FOM R * E ; reduced Q , C , and C DS(

 8.2. Size:1024K  infineon
 ipn80r600p7.pdf pdf_icon

IPN80R2K4P7

IPN80R600P7 MOSFET PG-SOT223 800V CoolMOS P7 Power Transistor The latest 800V CoolMOS P7 series sets a new benchmark in 800V super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon s over 18 years pioneering super junction technology innovation. Features Best-in-class FOM R * E ; reduced Q , C , and C DS(

 8.3. Size:1037K  infineon
 ipn80r900p7.pdf pdf_icon

IPN80R2K4P7

IPN80R900P7 MOSFET PG-SOT223 800V CoolMOS P7 Power Transistor The latest 800V CoolMOS P7 series sets a new benchmark in 800V super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon s over 18 years pioneering super junction technology innovation. Features Best-in-class FOM R * E ; reduced Q , C , and C DS(

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... IPN70R2K0P7S , IPN70R2K1CE , IPN70R360P7S , IPN70R600P7S , IPN70R750P7S , IPN70R900P7S , IPN80R1K2P7 , IPN80R1K4P7 , IRF2807 , IPN80R4K5P7 , IPN80R600P7 , IPN80R750P7 , IPN80R900P7 , IPN95R3K7P7 , IPP015N04N6 , IPP100N12S3-05 , IPP120N08S4-03 .

History: BLS60R380F-A

 

 
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