All MOSFET. IPN80R750P7 Datasheet

 

IPN80R750P7 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IPN80R750P7
   Marking Code: 80R750
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 7.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
   |Id|ⓘ - Maximum Drain Current: 7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 17 nC
   trⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 9 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm
   Package: SOT223

 IPN80R750P7 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPN80R750P7 Datasheet (PDF)

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