IPN80R750P7 Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: IPN80R750P7
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 7.2 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 800 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 7 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 8 ns
Cossⓘ - Выходная емкость: 9 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.75 Ohm
Тип корпуса: SOT223
Аналог (замена) для IPN80R750P7
IPN80R750P7 Datasheet (PDF)
ipn80r750p7.pdf

IPN80R750P7MOSFETPG-SOT223800V CoolMOS P7 Power TransistorThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features Best-in-class FOM R * E ; reduced Q , C , and CDS(
ipn80r2k4p7.pdf

IPN80R2K4P7MOSFETPG-SOT223800V CoolMOS P7 Power TransistorThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features Best-in-class FOM R * E ; reduced Q , C , and CDS(
ipn80r600p7.pdf

IPN80R600P7MOSFETPG-SOT223800V CoolMOS P7 Power TransistorThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features Best-in-class FOM R * E ; reduced Q , C , and CDS(
ipn80r900p7.pdf

IPN80R900P7MOSFETPG-SOT223800V CoolMOS P7 Power TransistorThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features Best-in-class FOM R * E ; reduced Q , C , and CDS(
Другие MOSFET... IPN70R600P7S , IPN70R750P7S , IPN70R900P7S , IPN80R1K2P7 , IPN80R1K4P7 , IPN80R2K4P7 , IPN80R4K5P7 , IPN80R600P7 , IRF830 , IPN80R900P7 , IPN95R3K7P7 , IPP015N04N6 , IPP100N12S3-05 , IPP120N08S4-03 , IPP120N08S4-04 , IPP120N10S4-03 , IPP120N10S4-05 .
History: SWF13N65K2 | FDD8870 | IPP015N04NG | IRLU3915 | BRS1N60
History: SWF13N65K2 | FDD8870 | IPP015N04NG | IRLU3915 | BRS1N60



Список транзисторов
Обновления
MOSFET: JMSL0406AKQ | JMSL0406AK | JMSL0406AGQ | JMSL0406AGDQ | JMSL0406AGD | JMSL04060GDQ | JMSL04055UQ | JMSL04055GQ | JMSL0403PU | JMSL0403PK | JMSL0403PGQ | JMSL0403PG | JMSL0403AU | JMSL0403AGQ | JMSL0403AG | JMTQ90N02A
Popular searches
mpsa20 | irfp264 | ksc2690 | bc546 datasheet | mpsa06 transistor | tta004b | 2sc1116 | 2n3565 equivalent