All MOSFET. IPP015N04N6 Datasheet

 

IPP015N04N6 Datasheet and Replacement


   Type Designator: IPP015N04N6
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 200 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 120 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 4000 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0015 Ohm
   Package: TO220
 

 IPP015N04N6 substitution

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IPP015N04N6 Datasheet (PDF)

 ..1. Size:670K  infineon
ipp015n04n6 ipb015n04n6.pdf pdf_icon

IPP015N04N6

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 4.1. Size:670K  infineon
ipp015n04n ipb015n04n.pdf pdf_icon

IPP015N04N6

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 4.2. Size:673K  infineon
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IPP015N04N6

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 4.3. Size:245K  inchange semiconductor
ipp015n04n.pdf pdf_icon

IPP015N04N6

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPP015N04NIIPP015N04NFEATURESStatic drain-source on-resistance:RDS(on) 1.5mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAX

Datasheet: IPN80R1K2P7 , IPN80R1K4P7 , IPN80R2K4P7 , IPN80R4K5P7 , IPN80R600P7 , IPN80R750P7 , IPN80R900P7 , IPN95R3K7P7 , IRF520 , IPP100N12S3-05 , IPP120N08S4-03 , IPP120N08S4-04 , IPP120N10S4-03 , IPP120N10S4-05 , IPP120P04P4-04 , IPP120P04P4L-03 , IPP17N25S3-100 .

History: SSP7434N | HRP40N08K | SFP026N100C3 | SI7302DN | APT12067JLL | IRLU3714ZPBF | SIS780DN

Keywords - IPP015N04N6 MOSFET datasheet

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