IPP015N04N6 MOSFET. Datasheet pdf. Equivalent
Type Designator: IPP015N04N6
Marking Code: 015N04N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 200 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 120 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 188 nC
Rise Time (tr): 10 nS
Drain-Source Capacitance (Cd): 4000 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0015 Ohm
Package: TO220
IPP015N04N6 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IPP015N04N6 Datasheet (PDF)
ipp015n04n6 ipb015n04n6.pdf
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ipp015n04n ipb015n04n.pdf
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ipp015n04n.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPP015N04NIIPP015N04NFEATURESStatic drain-source on-resistance:RDS(on) 1.5mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAX
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
