All MOSFET. IPP015N04N6 Datasheet

 

IPP015N04N6 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IPP015N04N6
   Marking Code: 015N04N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 200 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 120 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 188 nC
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 4000 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0015 Ohm
   Package: TO220

 IPP015N04N6 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPP015N04N6 Datasheet (PDF)

 ..1. Size:670K  infineon
 ipp015n04n6 ipb015n04n6.pdf

IPP015N04N6 IPP015N04N6

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 4.1. Size:670K  infineon
 ipp015n04n ipb015n04n.pdf

IPP015N04N6 IPP015N04N6

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 4.2. Size:673K  infineon
 ipp015n04ng ipb015n04ng.pdf

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 4.3. Size:245K  inchange semiconductor
 ipp015n04n.pdf

IPP015N04N6 IPP015N04N6

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPP015N04NIIPP015N04NFEATURESStatic drain-source on-resistance:RDS(on) 1.5mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAX

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: IPP037N08N3GE8181 | SGB100N025 | IRF9392 | STD40NF03LT4 | FDMC7692S | STD17NF25 | IRF8313

 

 
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