IPP015N04N6 Datasheet and Replacement
Type Designator: IPP015N04N6
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 200 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 120 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 4000 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0015 Ohm
Package: TO220
IPP015N04N6 substitution
IPP015N04N6 Datasheet (PDF)
ipp015n04n6 ipb015n04n6.pdf

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ipp015n04n ipb015n04n.pdf

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ipp015n04ng ipb015n04ng.pdf

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ipp015n04n.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPP015N04NIIPP015N04NFEATURESStatic drain-source on-resistance:RDS(on) 1.5mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAX
Datasheet: IPN80R1K2P7 , IPN80R1K4P7 , IPN80R2K4P7 , IPN80R4K5P7 , IPN80R600P7 , IPN80R750P7 , IPN80R900P7 , IPN95R3K7P7 , K2611 , IPP100N12S3-05 , IPP120N08S4-03 , IPP120N08S4-04 , IPP120N10S4-03 , IPP120N10S4-05 , IPP120P04P4-04 , IPP120P04P4L-03 , IPP17N25S3-100 .
History: CEU83A3 | NTH4L020N120SC1
Keywords - IPP015N04N6 MOSFET datasheet
IPP015N04N6 cross reference
IPP015N04N6 equivalent finder
IPP015N04N6 lookup
IPP015N04N6 substitution
IPP015N04N6 replacement
History: CEU83A3 | NTH4L020N120SC1



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