IPP015N04N6 Datasheet. Specs and Replacement

Type Designator: IPP015N04N6

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 200 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 120 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 4000 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0015 Ohm

Package: TO220

IPP015N04N6 substitution

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IPP015N04N6 datasheet

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IPP015N04N6

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 4.1. Size:670K  infineon
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IPP015N04N6

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 4.2. Size:673K  infineon
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IPP015N04N6

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 4.3. Size:245K  inchange semiconductor
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IPP015N04N6

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPP015N04N IIPP015N04N FEATURES Static drain-source on-resistance RDS(on) 1.5m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAX... See More ⇒

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Detailed specifications: IPN80R1K2P7, IPN80R1K4P7, IPN80R2K4P7, IPN80R4K5P7, IPN80R600P7, IPN80R750P7, IPN80R900P7, IPN95R3K7P7, 75N75, IPP100N12S3-05, IPP120N08S4-03, IPP120N08S4-04, IPP120N10S4-03, IPP120N10S4-05, IPP120P04P4-04, IPP120P04P4L-03, IPP17N25S3-100

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