IPP17N25S3-100 Datasheet. Specs and Replacement

Type Designator: IPP17N25S3-100

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 107 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 17 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3.7 nS

Cossⓘ - Output Capacitance: 480 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm

Package: TO220

IPP17N25S3-100 substitution

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IPP17N25S3-100 datasheet

 ..1. Size:203K  infineon
 ipb17n25s3-100 ipp17n25s3-100.pdf pdf_icon

IPP17N25S3-100

IPB17N25S3-100 IPP17N25S3-100 OptiMOS -T Power-Transistor Product Summary VDS 250 V RDS(on),max 100 m ID 17 A Features PG-TO263-3-2 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPB17N25S3-100 PG-TO263-3-2 3N2... See More ⇒

Detailed specifications: IPP015N04N6, IPP100N12S3-05, IPP120N08S4-03, IPP120N08S4-04, IPP120N10S4-03, IPP120N10S4-05, IPP120P04P4-04, IPP120P04P4L-03, IRF830, IPP50N12S3L-15, IPP60R022S7, IPP60R090CFD7, IPP60R105CFD7, IPP60R120P7, IPP60R160P7, IPP60R210CFD7, IPP70N12S3-11

Keywords - IPP17N25S3-100 MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs