All MOSFET. IPP17N25S3-100 Datasheet

 

IPP17N25S3-100 Datasheet and Replacement


   Type Designator: IPP17N25S3-100
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 107 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 17 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 3.7 nS
   Cossⓘ - Output Capacitance: 480 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: TO220
 

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IPP17N25S3-100 Datasheet (PDF)

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IPP17N25S3-100

IPB17N25S3-100IPP17N25S3-100OptiMOS-T Power-TransistorProduct SummaryVDS 250 VRDS(on),max 100mID 17 AFeaturesPG-TO263-3-2 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPB17N25S3-100 PG-TO263-3-2 3N2

Datasheet: IPP015N04N6 , IPP100N12S3-05 , IPP120N08S4-03 , IPP120N08S4-04 , IPP120N10S4-03 , IPP120N10S4-05 , IPP120P04P4-04 , IPP120P04P4L-03 , IRF1405 , IPP50N12S3L-15 , IPP60R022S7 , IPP60R090CFD7 , IPP60R105CFD7 , IPP60R120P7 , IPP60R160P7 , IPP60R210CFD7 , IPP70N12S3-11 .

History: SSP65R090S2 | CRTD110N03L

Keywords - IPP17N25S3-100 MOSFET datasheet

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