All MOSFET. IPP80R750P7 Datasheet

 

IPP80R750P7 Datasheet and Replacement


   Type Designator: IPP80R750P7
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 51 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 9 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm
   Package: TO220
 

 IPP80R750P7 substitution

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IPP80R750P7 Datasheet (PDF)

 ..1. Size:945K  infineon
 ipp80r750p7.pdf pdf_icon

IPP80R750P7

IPP80R750P7MOSFETPG-TO 220800V CoolMOS P7 Power TransistortabThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features Best-in-class FOM R * E ; reduced Q , C , and C

 8.1. Size:956K  infineon
 ipp80r900p7.pdf pdf_icon

IPP80R750P7

IPP80R900P7MOSFETPG-TO 220800V CoolMOS P7 Power TransistortabThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features Best-in-class FOM R * E ; reduced Q , C , and C

 8.2. Size:966K  infineon
 ipp80r360p7.pdf pdf_icon

IPP80R750P7

IPP80R360P7MOSFETPG-TO 220800V CoolMOS P7 Power TransistortabThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features Best-in-class FOM R * E ; reduced Q , C , and C

 8.3. Size:949K  infineon
 ipp80r450p7.pdf pdf_icon

IPP80R750P7

IPP80R450P7MOSFETPG-TO 220800V CoolMOS P7 Power TransistortabThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features Best-in-class FOM R * E ; reduced Q , C , and C

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Datasheet: IPP70N12S3-11 , IPP80N08S4-06 , IPP80P03P4-05 , IPP80P04P4-07 , IPP80P04P4L-04 , IPP80P04P4L-08 , IPP80R360P7 , IPP80R450P7 , IRF3205 , IPP80R900P7 , IPS60R1K0CE , IPS60R1K0PFD7S , IPS60R210PFD7S , IPS60R280PFD7S , IPS60R2K1CE , IPS60R360PFD7S , IPS60R600PFD7S .

History: MTE05N10E3

Keywords - IPP80R750P7 MOSFET datasheet

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