IPP80R750P7 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IPP80R750P7
Маркировка: 80R750P7
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 51 W
Предельно допустимое напряжение сток-исток |Uds|: 800 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 3.5 V
Максимально допустимый постоянный ток стока |Id|: 7 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 17 nC
Время нарастания (tr): 8 ns
Выходная емкость (Cd): 9 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.75 Ohm
Тип корпуса: TO220
Аналог (замена) для IPP80R750P7
IPP80R750P7 Datasheet (PDF)
ipp80r750p7.pdf
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IPP80R750P7MOSFETPG-TO 220800V CoolMOS P7 Power TransistortabThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features Best-in-class FOM R * E ; reduced Q , C , and C
ipp80r900p7.pdf
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IPP80R900P7MOSFETPG-TO 220800V CoolMOS P7 Power TransistortabThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features Best-in-class FOM R * E ; reduced Q , C , and C
ipp80r360p7.pdf
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IPP80R360P7MOSFETPG-TO 220800V CoolMOS P7 Power TransistortabThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features Best-in-class FOM R * E ; reduced Q , C , and C
ipp80r450p7.pdf
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IPP80R450P7MOSFETPG-TO 220800V CoolMOS P7 Power TransistortabThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features Best-in-class FOM R * E ; reduced Q , C , and C
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