IPS80R1K2P7 Datasheet. Specs and Replacement
Type Designator: IPS80R1K2P7
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 37 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 4.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 6 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
Package: TO251
IPS80R1K2P7 substitution
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IPS80R1K2P7 datasheet
ips80r1k2p7.pdf
IPS80R1K2P7 MOSFET IPAK SL 800V CoolMOS P7 Power Transistor tab The latest 800V CoolMOS P7 series sets a new benchmark in 800V super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon s over 18 years pioneering super junction technology innovation. Features Best-in-class FOM R * E ; reduced Q , C , and C ... See More ⇒
ips80r1k4p7.pdf
IPS80R1K4P7 MOSFET IPAK SL 800V CoolMOS P7 Power Transistor tab The latest 800V CoolMOS P7 series sets a new benchmark in 800V super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon s over 18 years pioneering super junction technology innovation. Features Best-in-class FOM R * E ; reduced Q , C , and C ... See More ⇒
ips80r2k4p7.pdf
IPS80R2K4P7 MOSFET IPAK SL 800V CoolMOS P7 Power Transistor tab The latest 800V CoolMOS P7 series sets a new benchmark in 800V super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon s over 18 years pioneering super junction technology innovation. Features Best-in-class FOM R * E ; reduced Q , C , and C ... See More ⇒
ips80r900p7.pdf
IPS80R900P7 MOSFET IPAK SL 800V CoolMOS P7 Power Transistor tab The latest 800V CoolMOS P7 series sets a new benchmark in 800V super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon s over 18 years pioneering super junction technology innovation. Features Best-in-class FOM R * E ; reduced Q , C , and C ... See More ⇒
Detailed specifications: IPS60R280PFD7S, IPS60R2K1CE, IPS60R360PFD7S, IPS60R600PFD7S, IPS70R1K4P7S, IPS70R360P7S, IPS70R600P7S, IPS70R900P7S, IRF640N, IPS80R1K4P7, IPS80R2K0P7, IPS80R2K4P7, IPS80R600P7, IPS80R750P7, IPS80R900P7, IPSA70R1K2P7S, IPSA70R1K4CE
Keywords - IPS80R1K2P7 MOSFET specs
IPS80R1K2P7 cross reference
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