IPS80R1K2P7 datasheet, аналоги, основные параметры
Наименование производителя: IPS80R1K2P7
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 37 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 800 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 4.5 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 8 ns
Cossⓘ - Выходная емкость: 6 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 1.2 Ohm
Тип корпуса: TO251
Аналог (замена) для IPS80R1K2P7
- подборⓘ MOSFET транзистора по параметрам
IPS80R1K2P7 даташит
ips80r1k2p7.pdf
IPS80R1K2P7 MOSFET IPAK SL 800V CoolMOS P7 Power Transistor tab The latest 800V CoolMOS P7 series sets a new benchmark in 800V super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon s over 18 years pioneering super junction technology innovation. Features Best-in-class FOM R * E ; reduced Q , C , and C
ips80r1k4p7.pdf
IPS80R1K4P7 MOSFET IPAK SL 800V CoolMOS P7 Power Transistor tab The latest 800V CoolMOS P7 series sets a new benchmark in 800V super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon s over 18 years pioneering super junction technology innovation. Features Best-in-class FOM R * E ; reduced Q , C , and C
ips80r2k4p7.pdf
IPS80R2K4P7 MOSFET IPAK SL 800V CoolMOS P7 Power Transistor tab The latest 800V CoolMOS P7 series sets a new benchmark in 800V super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon s over 18 years pioneering super junction technology innovation. Features Best-in-class FOM R * E ; reduced Q , C , and C
ips80r900p7.pdf
IPS80R900P7 MOSFET IPAK SL 800V CoolMOS P7 Power Transistor tab The latest 800V CoolMOS P7 series sets a new benchmark in 800V super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon s over 18 years pioneering super junction technology innovation. Features Best-in-class FOM R * E ; reduced Q , C , and C
Другие IGBT... IPS60R280PFD7S, IPS60R2K1CE, IPS60R360PFD7S, IPS60R600PFD7S, IPS70R1K4P7S, IPS70R360P7S, IPS70R600P7S, IPS70R900P7S, IRF640N, IPS80R1K4P7, IPS80R2K0P7, IPS80R2K4P7, IPS80R600P7, IPS80R750P7, IPS80R900P7, IPSA70R1K2P7S, IPSA70R1K4CE
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Список транзисторов
Обновления
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