IPS80R1K2P7 - Даташиты. Аналоги. Основные параметры
Наименование производителя: IPS80R1K2P7
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 37 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 800 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 4.5 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 8 ns
Cossⓘ - Выходная емкость: 6 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 1.2 Ohm
Тип корпуса: TO251
Аналог (замена) для IPS80R1K2P7
IPS80R1K2P7 Datasheet (PDF)
ips80r1k2p7.pdf

IPS80R1K2P7MOSFETIPAK SL800V CoolMOS P7 Power TransistortabThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features Best-in-class FOM R * E ; reduced Q , C , and C
ips80r1k4p7.pdf

IPS80R1K4P7MOSFETIPAK SL800V CoolMOS P7 Power TransistortabThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features Best-in-class FOM R * E ; reduced Q , C , and C
ips80r2k4p7.pdf

IPS80R2K4P7MOSFETIPAK SL800V CoolMOS P7 Power TransistortabThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features Best-in-class FOM R * E ; reduced Q , C , and C
ips80r900p7.pdf

IPS80R900P7MOSFETIPAK SL800V CoolMOS P7 Power TransistortabThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features Best-in-class FOM R * E ; reduced Q , C , and C
Другие MOSFET... IPS60R280PFD7S , IPS60R2K1CE , IPS60R360PFD7S , IPS60R600PFD7S , IPS70R1K4P7S , IPS70R360P7S , IPS70R600P7S , IPS70R900P7S , IRF630 , IPS80R1K4P7 , IPS80R2K0P7 , IPS80R2K4P7 , IPS80R600P7 , IPS80R750P7 , IPS80R900P7 , IPSA70R1K2P7S , IPSA70R1K4CE .
History: SIR838DP | CS138 | IRF6810S | AP4438BGM-HF | SL5N100D | SWD6N70K | XP202A0003MR-G
History: SIR838DP | CS138 | IRF6810S | AP4438BGM-HF | SL5N100D | SWD6N70K | XP202A0003MR-G



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